Zobrazeno 1 - 10
of 15
pro vyhledávání: '"A V Soukhorukov"'
Autor:
Petr G. Sennikov, A. V. Soukhorukov, E. A. Kalinina, Davud V. Guseinov, Nickolay Abrosimov, A. A. Ezhevskii
Publikováno v:
Semiconductors. 54:1336-1340
The behavior of lithium donors in bulk single-crystal isotopically pure Si1 – xGex alloys (x = 0.0039–0.05) enriched in spinless 28Si and 72Ge isotopes (99.998 and 99.984%, respectively) is investigated by electron spin resonance. The fine struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11320f678bc0ba45b2d3b61cf907afaa
https://doi.org/10.1134/s1063782620100097
https://doi.org/10.1134/s1063782620100097
Autor:
A. A. Ezhevskii, Davud V. Guseinov, Nikita Gusev, A. V. Novikov, A. V. Soukhorukov, D. V. Yurasov
Publikováno v:
Physical Review B. 101
An inverse spin Hall effect (ISHE) in $n$-type silicon was observed experimentally when conduction electrons were scattered on the spin-orbit potential of bismuth. The spin current in the silicon layer was generated by excitation of the magnetization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc38ef8a99b3d683f184a286c2940d7
https://doi.org/10.1103/physrevb.101.195202
https://doi.org/10.1103/physrevb.101.195202
Autor:
D. G. Zverev, A. V. Soukhorukov, Davud V. Guseinov, Sergey A. Popkov, Georgy Mamin, A. A. Ezhevskii, A. A. Konakov, Helge Riemann, Alexandra P. Detochenko, Nikolay V. Abrosimov
Publikováno v:
Solid State Phenomena. 242:322-326
We report a detailed study of electron longitudinal and transverse spin relaxation times for Li donors in monoisotopic 28Si over the temperature range 4–20 K using continuous wave and pulsed electron paramagnetic resonance. Comparison of the obtain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2488928b398e8d6af064e4b0fe04ad5e
https://doi.org/10.4028/www.scientific.net/ssp.242.322
https://doi.org/10.4028/www.scientific.net/ssp.242.322
Autor:
Alexandra V. Koroleva, Alexei V. Kudrin, A. A. Konakov, Davud V. Guseinov, A. V. Soukhorukov, Sergey A. Popkov, A. A. Ezhevskii, Helge Riemann, Alexandra P. Detochenko, Nikolai V. Abrosimov
Publikováno v:
Solid State Phenomena. 242:327-331
Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1·1013- 7.7·1015cm-3concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aed150ccf8aacafd23b67caf7cd1835
https://doi.org/10.4028/www.scientific.net/ssp.242.327
https://doi.org/10.4028/www.scientific.net/ssp.242.327
Autor:
Sergey A. Popkov, Nikolay V. Abrosimov, A. A. Ezhevskii, Helge Riemann, A. V. Soukhorukov, A. A. Konakov, Davud V. Guseinov
Publikováno v:
Solid State Phenomena. :191-200
The inverted structure of the 1s ground state of lithium in silicon provides a unique opportunity to study inter-valley spin-orbit interactions of donor electrons. A study of lithium doped silicon enriched in the 28Si isotope with a low oxygen conten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f3c963332a3eb6fc2227ad5e4d18b7
https://doi.org/10.4028/www.scientific.net/ssp.205-206.191
https://doi.org/10.4028/www.scientific.net/ssp.205-206.191
Autor:
A. V. Soukhorukov, Nickolay Abrosimov, A. V. Gusev, Sergey A. Popkov, Davud V. Guseinov, A. A. Ezhevskii, Helge Riemann, V. A. Gavva
Publikováno v:
Semiconductors. 47:203-208
The fine structure of the spectra of a shallow-level Li donor center and a Fe0 deep donor (S = 1), which occupy tetrahedral interstices in a silicon lattice, is studied in monoisotopic silicon 28Si due to considerable narrowing of the lines of ESR sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ac73dd9c262084a29db378be5ada20
https://doi.org/10.1134/s1063782613020073
https://doi.org/10.1134/s1063782613020073
Autor:
A. V. Soukhorukov, A. A. Konakov, Sergey A. Popkov, Vladimir A. Burdov, A. A. Ezhevskii, Davud V. Guseinov
Publikováno v:
Semiconductors. 47:169-173
The temperature dependence of the conduction electron g factor in silicon is studied theoretically and experimentally. The theory of renormalization of the electron energy in an external magnetic field due to interaction with lattice vibrations is de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecda5b5e2bff6ff7903bf14d29ffb1ad
https://doi.org/10.1134/s1063782612120093
https://doi.org/10.1134/s1063782612120093
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:432-436
An anisotropic EPR spectrum at T = 4 K was observed in silicon samples irradiated by phosphorus ions and subsequently annealed at 1000°C. Epitaxial silicon layers with a natural isotope composition and enriched by 28Si isotope grown on a natural sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdce27c813e9f1bf19d8f016cdcedcbe
https://doi.org/10.1134/s1027451010030122
https://doi.org/10.1134/s1027451010030122
Autor:
Alexei V. Kudrin, A. A. Ezhevskii, Davud V. Guseinov, Alexandra P. Detochenko, A. V. Soukhorukov, Helge Riemann, Nickolay Abrosimov
Publikováno v:
Journal of Physics: Conference Series. 816:012001
Spin transport of conduction electrons in silicon samples doped with bismuth in the 1.11013 - 7.71015 cm-3 concentration range was studied by the Hall effect measurements. The dependence of the Hall voltage magnitude on the magnetic field is the sum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07efbf513adf0ebbe540f180c48c35e9
https://doi.org/10.1088/1742-6596/816/1/012001
https://doi.org/10.1088/1742-6596/816/1/012001
Publikováno v:
Physica B: Condensed Matter. 404:5063-5065
Electron paramagnetic resonance (X-band EPR) spectra are reported for lithium-related donors in monoisotopic silicon. High resolution EPR spectra of lithium donor centers in monoisotopic silicon, enriched by 28 Si isotope (99.99%) with very narrow in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d67131b83ba1619a768d2f52e8002a0
https://doi.org/10.1016/j.physb.2009.08.225
https://doi.org/10.1016/j.physb.2009.08.225