Zobrazeno 1 - 10
of 69
pro vyhledávání: '"A V Simashkevich"'
Autor:
A I Neĭmark, A V Simashkevich
Publikováno v:
Терапевтический архив, Vol 84, Iss 10, Pp 62-64 (2012)
Aim. To improve surgical results in patients with benign prostatic hyperplasia (BPH) and urolithiasis (UL) and to evaluate the efficacy of Furamag used as an agent to prevent infectious and inflammatory complications. Subjects and methods. Seventy-tw
Externí odkaz:
https://doaj.org/article/7a4e9f4338694f918074ac1250c073a5
Autor:
D. Serban, M. Caraman, A. V. Simashkevich, Gvidona P. Shevchenko, Yu. V. Bokshyts, N. Curmei, I. Dementiev, L. Bruc, T. Goglidze
Publikováno v:
Surface Engineering and Applied Electrochemistry. 57:315-322
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a
Autor:
M. Caraman, N. Curmei, L. Bruc, D. Serban, T. Goglidze, A. V. Simashkevich, Annett Thøgersen, I. Dementiev, Iu. Bokshitz, G. Shevchenko, Alexander Ulyashin
Publikováno v:
2020 International Semiconductor Conference (CAS).
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus the formation by this method of the thin layers SiO x with a thickness of about ~1nm is demonstrated, which allows obtainin
Autor:
Th. Dittrich, D.A. Sherban, Susan Schorr, A. V. Simashkevich, L. Dermenji, Ernest Arushanov, N. Curmei, Galina Gurieva, Jörg Rappich, L. Bruc, Maxim Guc
Publikováno v:
Thin Solid Films
The recent investigation of kesterite type quaternary compounds showed that one of the main detrimental problems, which limits the efficiency of the solar cells based on these materials, is related to the high defect concentrations, mainly Cu-Zn diso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2df5df8b24e4057f2c45b79076d10ff8
https://zenodo.org/record/7628515
https://zenodo.org/record/7628515
Autor:
Marin Rusu, L. Dermenji, Ernest Arushanov, V. Fedorov, A. V. Simashkevich, Susan Schorr, Maxim Guc, D.A. Sherban, L. Bruc, Galina Gurieva, N. Curmei
Publikováno v:
Surface Engineering and Applied Electrochemistry. 52:509-514
The spray pyrolysis was used for the deposition of Cu2ZnSn(S, Se)4 (CZTSSe) kesterite thin films. The basic spray pyrolysis solution was prepared from two precursor solutions containing thiourea and cooled to a temperature near 1°C, which leads to m
Publikováno v:
Thin Solid Films. 610:35-41
The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region
Publikováno v:
Surface Engineering and Applied Electrochemistry. 52:284-288
Structures ITO/SiO х /n-Si are fabricated by pulverization of solutions of indium and tin chlorides on the (100) surface of silicon wafers with resistivity 4.5 Ω cm. The influence of the state of the Si surface on the efficiency of structures as ph
(AgxCu1-x)2ZnSn(S,Se)4 Thin Films Prepared By Spray Pyrolysis: The Influence of the Ag Concentration
Autor:
N. Curmei, Susan Schorr, Maxim Guc, L. Dermenji, L. Bruc, Ernest Arushanov, Galina Gurieva, A. V. Simashkevich, D.A. Sherban
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
Thin films of (Ag x Cu 1-x ) 2 ZnSn(S,Se) 4 (ACZTSSe), with x = 0.05 – 0.20, were deposited using the spray pyrolysis method, with subsequent annealing in S + Se atmosphere. Investigation of the chemical composition, structural properties and Raman
Autor:
I. Goncharov, L. Bruc, A. V. Simashkevich, V. S. Zakhvalinskii, Marin Rusu, D.A. Sherban, N. Curmei, E.A. Piliuk
Publikováno v:
physica status solidi (a). 212:184-188
Thin films of predominantly amorphous n-type SiC were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized SiC was used as a solid-state target. Deposition was carried out on a cold substrate of p-type Si (100)
Publikováno v:
Surface Engineering and Applied Electrochemistry. 47:266-271
The results on the optimization of the parameters of solar cells (SCs) with monofacial and bifacial sensitivity based on n+ITO-SiO2-n-n+Si structures with isotype junctions are described. The developed technique of the structurization of silicon wafe