Zobrazeno 1 - 10 of 62 pro vyhledávání: '"A V Kudrya"'
1
Methods of dislocation structure characterization in AIIIBV semiconductor single crystals
Autor: S. N. Knyazev, A. V. Kudrya, N. Yu. Komarovskiy, Yu. N. Parkhomenko, E. V. Molodtsova, V. V. Yushchuk
Publikováno v: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 25:323-336
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64f9a2929448e64b0bcc978f74d1b9b9
https://doi.org/10.17073/1609-3577-2022-4-323-336
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2
Skin microbiota of children with acute urticaria of varying severity
Autor: Y. L. Naboka, A. A. Lebedenko, A. N. Posevina, L. A. Averkina, E. V. Ivannikova, E. V. Kudrya
Publikováno v: Medical Herald of the South of Russia. 13:100-105
Objective: to evaluate changes in the skin microbiota of the children with acute urticaria of varying severity. Materials and methods: a total of 94 children aged 3 to 14 years old were examined. Four clinical groups were formed. Group I (n=15) inclu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b8a90b8d81df9949381ba535f651d8c
https://doi.org/10.21886/2219-8075-2022-13-4-100-105
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3
Prediction of the Destruction of Materials with Inhomogeneous Structures
Autor: A. V. Kudrya, E. A. Sokolovskaya
Publikováno v: Physics of Metals and Metallography. 123:1253-1264
Abstract Structural and metallurgical factors that cause the differences in the fracture resistance of steels and alloys are studied, which is necessary for predicting the destruction of media with an inhomogeneous structure. The prospects for digita
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31eaff256ad10e82113196f64392a28e
https://doi.org/10.1134/s0031918x22601615
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10
Methods of dislocation structure characterization in AIIIBV semiconductor single crystals
Autor: Stanislav N. Knyazev, Aleksandr V. Kudrya, Nikita Yu. Komarovskiy, Yuri N. Parkhomenko, Elena V. Molodtsova, Vyacheslav V. Yushchuk
Publikováno v: Modern Electronic Materials 8(4): 131-140
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fb7d97514686297692c4dcee0a3434f
https://zenodo.org/record/7527879
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