Zobrazeno 1 - 10
of 29
pro vyhledávání: '"A V G, Chizmeshya"'
Publikováno v:
IEEE Photonics Journal, Vol 2, Iss 6, Pp 924-941 (2010)
We report new approaches based on rational design and preparation of chemical vapor deposition precursors involving novel main-group hydrides to fabricate new families of Si-based semiconductors and prototype devices that display compositional and st
Externí odkaz:
https://doaj.org/article/355ec3225ff54bd6b7baeaf481037a49
Autor:
Helene Piet, Andrew V. G. Chizmeshya, Bin Chen, Stella Chariton, Eran Greenberg, Vitali B. Prakapenka, Sang-Heon Shim
Publikováno v:
Physical Review B. 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6791e0be3093426cc9f1c38e7aef3cf6
https://doi.org/10.1103/physrevb.104.224106
https://doi.org/10.1103/physrevb.104.224106
Autor:
J. Tolle, R. Roucka, I. S. T. Tsong, C. Ritter, P. A. Crozier, A. V. G. Chizmeshya, J. Kouvetakis
Publikováno v:
Applied Physics Letters. 82:2398-2400
A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f9a399ba0b6e50256fdb04de0277b3
https://doi.org/10.1063/1.1566099
https://doi.org/10.1063/1.1566099
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 39(19)
The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f5f9dd4817f7117c81af8dc29db55496
https://pubmed.ncbi.nlm.nih.gov/20379588
https://pubmed.ncbi.nlm.nih.gov/20379588
Autor:
Yukiko, Yamada-Takamura, Z T, Wang, Y, Fujikawa, T, Sakurai, Q K, Xue, J, Tolle, P-L, Liu, A V G, Chizmeshya, J, Kouvetakis, I S T, Tsong
Publikováno v:
Physical review letters. 95(26)
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d866a3c9cb74972df2735ead8b1b2394
https://pubmed.ncbi.nlm.nih.gov/16486376
https://pubmed.ncbi.nlm.nih.gov/16486376
Autor:
R. B. Doak, A. V. G. Chizmeshya
Publikováno v:
Atomic and Molecular Beams ISBN: 9783642631504
In complete contradiction to intuition based on classical mechanics, an atom striking a solid surface at extremely low velocity does not stick. Understanding of this non-sticking emerges only through quantum theory, which predicts the sticking probab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bec10b63477a2c8925b47e97fffff71
https://doi.org/10.1007/978-3-642-56800-8_11
https://doi.org/10.1007/978-3-642-56800-8_11
Autor:
Richard T. Beeler, Gordon J. Grzybowski, Radek Roucka, Liying Jiang, Jay Mathews, David J. Smith, JoseÌ MeneÌndez, Andrew V. G. Chizmeshya, John Kouvetakis
Publikováno v:
Chemistry of Materials; Oct2011, Vol. 23 Issue 20, p4480-4486, 7p
Autor:
J. B. Tice, V. R. DâCosta, Gordon Grzybowski, A. V. G. Chizmeshya, J. Tolle, J. Menendez, J. Kouvetakis
Publikováno v:
Chemistry of Materials; Sep2010, Vol. 22 Issue 18, p5296-5305, 10p
Publikováno v:
Chemistry of Materials; Jul2010, Vol. 22 Issue 13, p3884-3899, 16p