Zobrazeno 1 - 10
of 1 225
pro vyhledávání: '"A V Dvurechenskii"'
Дефектно-примесная инженерия. Радиационные эффекты в полупроводниках Для исследования природы дефектов в ионно-имплантированном крем
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::162c352d7de61ca8b8c3e171b540b207
http://elib.bsu.by/handle/123456789/215214
http://elib.bsu.by/handle/123456789/215214
Autor:
Vladimir A. Zinovyev, Zhanna V. Smagina, Aigul F. Zinovieva, Aleksei A. Bloshkin, Anatoly V. Dvurechenskii, Ekaterina E. Rodyakina, Margarita V. Stepikhova, Artem V. Peretokin, Alexey V. Novikov
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2422 (2023)
The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As
Externí odkaz:
https://doaj.org/article/a7afe1cee3c04c89b06f5e2691803e24
Autor:
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii
Publikováno v:
Photonics, Vol 10, Iss 7, p 764 (2023)
We report on the near-infrared (NIR) photoresponse of a micropatterned Ge/Si quantum dot (QD) pin photodiode at different angles of radiation incidence. The photon-trapping hole array was etched through the n+-type top contact layer to reach the buri
Externí odkaz:
https://doaj.org/article/1e7ae95450cf4f4088e64cd079f47797
Autor:
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev
Publikováno v:
Materials Proceedings, Vol 14, Iss 1, p 68 (2023)
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed. We c
Externí odkaz:
https://doaj.org/article/7d44e4293d104be4b25a9b780705fc20
Autor:
Aigul F. Zinovieva, Vladimir A. Zinovyev, Natalia P. Stepina, Vladimir A. Volodin, Aleksey Y. Krupin, Aleksey V. Kacyuba, Anatoly V. Dvurechenskii
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3623 (2022)
The formation of CaSi2 polycrystalline structures under the postgrowth electron irradiation of epitaxial CaF2/Si(111) films with embedded thin Si layers was studied. The dependence on the electron exposure time was investigated for two types of struc
Externí odkaz:
https://doaj.org/article/bca1bfe67a9d477bba55cecdbb7a31e8
Autor:
Natalia P. Stepina, M. S. Galkov, Mikhail R. Predtechenskiy, Alexander E. Bezrodny, Viktor V. Kirienko, Anatolii V. Dvurechenskii
Publikováno v:
Modern Electronic Materials, Vol 5, Iss 1, Pp 21-26 (2019)
Buckypapers (BPs) with carbon nanotubes (CNTs) are very promising for a lot of applications, in which their high conductance, strength and small weight are required. In this work, isotropic BPs were prepared using the solution-based deposition that i
Externí odkaz:
https://doaj.org/article/a08344977eb546eeb4214d75fadbbb2b
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 2993 (2022)
Photodetection based on assemblies of quantum dots (QDs) is able to tie the advantages of both the conventional photodetector and unique electronic properties of zero-dimensional structures in an unprecedented way. However, the biggest drawback of QD
Externí odkaz:
https://doaj.org/article/9d71ce0d01aa4f239804c6eb982785ab
Autor:
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennadiy N. Kamaev, Vladimir A. Volodin, Zhanna V. Smagina
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1407 (2022)
The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thick
Externí odkaz:
https://doaj.org/article/27965e57901140d0a57708c5de494454
Autor:
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii
Publikováno v:
JETP Letters. 116:628-633
The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25e54b239790690cc5b6ac53330c590
https://doi.org/10.1134/s0021364022602159
https://doi.org/10.1134/s0021364022602159
Autor:
Andrew I. Yakimov, Victor V. Kirienko, Aleksei A. Bloshkin, Dmitrii E. Utkin, Anatoly V. Dvurechenskii
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2302 (2021)
Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum effici
Externí odkaz:
https://doaj.org/article/ebdba8b8d4ca4c5bb4c3c34c3bdaf001