Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A V Almaev"'
Autor:
Nikita N. Yakovlev, Aleksei V. Almaev, Bogdan O. Kushnarev, Maksim G. Verkholetov, Maksim V. Poliakov, Mikhail M. Zinovev
Publikováno v:
Crystals, Vol 14, Iss 2, p 123 (2024)
Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film on a single-crystalline (2¯01) unintentionally doped (UID) β-Ga2O3 with a Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID β-Ga2O
Externí odkaz:
https://doaj.org/article/21128d7b1a2948d884242d7f405f6f8e
Autor:
Aleksei V. Almaev, Nikita N. Yakovlev, Dmitry A. Almaev, Maksim G. Verkholetov, Grigory A. Rudakov, Kristina I. Litvinova
Publikováno v:
Micromachines, Vol 14, Iss 10, p 1875 (2023)
The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300
Externí odkaz:
https://doaj.org/article/1b8aedb470ef4bc6beea055e84203124
Autor:
Aleksei V. Almaev, Viktor V. Kopyev, Vadim A. Novikov, Andrei V. Chikiryaka, Nikita N. Yakovlev, Abay B. Usseinov, Zhakyp T. Karipbayev, Abdirash T. Akilbekov, Zhanymgul K. Koishybayeva, Anatoli I. Popov
Publikováno v:
Materials; Volume 16; Issue 1; Pages: 342
Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indiu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f30eefcdc4284232c241ecdaec3eabf
Autor:
B. O. Kushnarev, V. I. Nikolaev, E. V. Chernikov, Nikita N. Yakovlev, Sergey Stepanov, A. I. Pechnikov, A. V. Almaev
Publikováno v:
IEEE Sensors Journal. 21:14636-14644
Electrical conductivity and gas sensitivity of $\alpha $ -Ga $_{2}\text{O}_{3}/\varepsilon $ ( $\kappa $ )-Ga2O3 structures were measured for oxygen concentrations ranging from 2 % to 100 % and temperatures ranging from 25 °C to 220 °C. It was foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7d29e5ab3b2d25e8913ba11652b582
https://doi.org/10.1109/jsen.2021.3072664
https://doi.org/10.1109/jsen.2021.3072664
Autor:
A. V. Almaev, A. I. Pechnikov, Sergey Stepanov, V. I. Nikolaev, Nikita N. Yakovlev, B. O. Kushnarev, E. V. Chernikov
Publikováno v:
Semiconductors. 2021. Vol. 55, № 3. P. 346-353
The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b5f112692ebd19035807e50b4e6eb76
https://doi.org/10.1134/s1063782621030027
https://doi.org/10.1134/s1063782621030027
Autor:
A. Y. Polyakov, A. V. Almaev, V. I. Nikolaev, A. I. Pechnikov, V. I. Shchemerov, A. A. Vasilev, E. B. Yakimov, A. I. Kochkova, V. V. Kopyev, B. O Kushnarev, S. J. Pearton
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:045002
Deep centers and their influence on photocurrent spectra and transients were studied for interdigitated photoresistors on α-Ga2O3 undoped semi-insulating films grown by Halide Vapor Phase Epitaxy (HVPE) on sapphire. Characterization involving curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c1ebbe0a586da84dbb16100242f1d5
https://doi.org/10.1149/2162-8777/acc900
https://doi.org/10.1149/2162-8777/acc900
Autor:
V. I. Nikolaev, A. V. Almaev, Yu. S. Petrova, I. A. Pechnikov, V. M. Kalygina, A. V. Tsymbalov, P. N. Butenko, V. V. Kopyev
Publikováno v:
Semiconductors. 54:1224-1229
The effect of ultraviolet radiation and a strong electric field on the conductivity of structures based on two types of polymorphic gallium-oxide films is studied. Both types of Ga2O3 films are obtained by hydride vapor phase epitaxy on smooth and pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976426483b220fc65a78ee30b9806783
https://doi.org/10.1134/s1063782620100152
https://doi.org/10.1134/s1063782620100152
Publikováno v:
Technical Physics Letters. 46:1028-1031
Thin polycrystalline Cr2O3 films were obtained using RF magnetron sputtering followed by annealing in air at T = 673 K. The obtained films had grain diameters within 40–70 nm and a bandgap width of 3.3 ± 0.2 eV. In a temperature range of 303–473
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21a48bf7b8cfe219f30c3cc0d69a3766
https://doi.org/10.1134/s106378502010017x
https://doi.org/10.1134/s106378502010017x
Publikováno v:
Russian Physics Journal. 63:882-887
The electrical and photoelectrical characteristics of Ga2O3/n-GaAs structures with anodic gallium oxide films obtained by oxidation of n-GaAs in the galvanostatic mode are studied. Gallium oxide films without thermal annealing are sensitive to UV-rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c5b4629b01112202b6cbb858b9906ff
https://doi.org/10.1007/s11182-020-02112-5
https://doi.org/10.1007/s11182-020-02112-5
Autor:
P. N. Butenko, A. V. Almaev, Yu. S. Petrova, I. A. Pechnikov, V. M. Kalygina, V. I. Nikolaev, A. V. Tsymbalov
Publikováno v:
Technical Physics Letters. 46:867-870
The effect of UV radiation and a strong electric field on the current–voltage characteristics of resistive structures based on polymorphic gallium oxide (Ga2O3) films is discussed. Ga2O3 films were deposited by the method of halide vapor phase epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c83f16f2bf10ed7dfb523818936f99d
https://doi.org/10.1134/s1063785020090060
https://doi.org/10.1134/s1063785020090060