Zobrazeno 1 - 10
of 53
pro vyhledávání: '"A V, Koveshnikov"'
Autor:
Nurulla F. Zikrillayev, Giyosiddin Kh. Mavlonov, Levent Trabzon, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Timur B. Ismailov, Yoldoshali A. Abduganiev
Publikováno v:
East European Journal of Physics, Iss 3, Pp 380-384 (2023)
One of the possible ways to obtain silicon with magnetic properties is the introduction of paramagnetic impurities into silicon: Cr, Mn, Fe, Ni, and Co. In our opinion, silicon materials containing magnetic nanosized clusters are most suitable for sp
Externí odkaz:
https://doaj.org/article/294c7ef6e4b1402eaed522074a26d49d
Autor:
Nurulla F. Zikrillaev, Giyosiddin A. ugli Kushiev, Sergey V. Koveshnikov, Bakhromjon A. Abdurakhmanov, Ugiloy K. Qurbonova, Abdujalol A. Sattorov
Publikováno v:
East European Journal of Physics, Iss 3, Pp 334-339 (2023)
The paper determines the technological regimes for obtaining GexSi1-x alloys by introducing germanium atoms into single-crystal silicon by the diffusion method. From the results of the study, it was found that the fundamental parameters of the formed
Externí odkaz:
https://doaj.org/article/57b1b938b2db4ea68f361e79223d0f0f
Publikováno v:
Surface Engineering and Applied Electrochemistry. 59:210-215
Publikováno v:
Inorganic Materials. 58:1-6
Publikováno v:
Technical Physics Letters. 47:641-644
Publikováno v:
Physics of the Solid State. 64:154-156
Autor:
S. V. Koveshnikov, S. B. Isamov, Kh. M. Iliev, M. K. Bakhadirkhanov, M. Kh. Majitov, M. O. Tursunov
Publikováno v:
Inorganic Materials. 57:655-662
We have studied the properties of KDB-5 silicon diffusion-doped with manganese in the temperature range 1100–1300°C. The results demonstrate that raising the diffusion temperature in the range 1175–1300°C leads to a decrease in the concentratio
Autor:
L. L. Pinsky, N. A. Ovcharenko, M. V. Khaitovych, G. A. Solovyova, A. V. Koveshnikov, Soumavo Mukherjee
Publikováno v:
Гепатология и гастроэнтерология, Vol 5, Iss 1, Pp 44-49 (2021)
Введение. Одним из значимых факторов прогрессирования фибротических изменений в печени признан стеатоз гепатоцитов, который продолжае
Publikováno v:
Semiconductors. 56:29-31
Publikováno v:
Technical Physics Letters. 46:1192-1195
It is shown that the photoresponse threshold and photosensitivity in a photoresistor material based on silicon doped with manganese atoms with the formation of the Mn4B nanoclusters can be changed by varying the electric field in the range of 0.1–3