Zobrazeno 1 - 10
of 13
pro vyhledávání: '"A V, Konchenko"'
Autor:
L Puzyreva, I Tolokh, V Konchenko, L Dalabaeva, I Dubrovska, N Didenko, A Druzenko, O Yanina, S Rudenko, N Bryukhanova, N Khlebova, A Lisichkina, L Zenkova, M Balabokhina
Publikováno v:
Immunopathology, Allergology, Infectology. :49-54
Publikováno v:
Educational environment today: development strategy
Современная образовательная среда: теория и практика
Современная образовательная среда: теория и практика
В статье авторами освещаются две темы: «Региональный компонент в образовательном процессе дошкольного образовательного учреждения» и
Publikováno v:
Journal of the American Chemical Society. 130:2553-2559
Thiol-tethered Ru(II) terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. M
Publikováno v:
Applied Surface Science. :299-305
Transport, optical and thermopower properties of thin epitaxial CrSi 2 and β-FeSi 2 films and their alloys (10–100 nm thick) on Si(1 1 1) p-type substrates have been investigated. Ex situ temperature Hall measurements of thin silicide films on Si(
Publikováno v:
Applied Surface Science. 166:113-118
In situ Hall measurements, ex situ Hall and Seebeck coefficient temperature measurements of very thin (0.3–2.4 nm) CrSi(111) epitaxial layers with Si(111)√3×√3/30° LEED pattern are presented. The sheet p-type conductivity in CrSi(111) layers
Publikováno v:
Scopus-Elsevier
The in situ Hall effect measurements at room temperature showed that formation of the atomically clean Si(111) 7×7 surface as a result of high-temperature annealing (T=1250°C, t=120–180 s) of n-Si reverses the majority carrier sign at the surface
Autor:
A. V. Konchenko, S. Ts. Krivoshchapov, D. L. Goroshko, N. G. Galkin, E. S. Zakharova, V. A. Ivanov
Publikováno v:
Surface Review and Letters. :257-265
By the method of in situ Hall effect measurements at room temperature, it was shown that the formation of a clean Si (111)(7×7) surface at high temperature annealing (T=1250°, t=120–180 s) of n-type conductivity silicon results in a change of the
Publikováno v:
Surface Review and Letters. :7-12
The first in situ Hall measurements of the ordered chromium surface phases on Si(111) substrate and CrSi(111) epitaxial films after their formation are presented. Formation of Si (111)-(1× 1)- Cr (0.1 nm Cr) and Si(111)-[([Formula: see text])/30°]-
Publikováno v:
Thin Solid Films. 311:230-238
Optical functions ( α ( ω ), n ( ω ), k ( ω ), e 1 ( ω ), e 2 ( ω ), Im e −1 ( ω ), G ( ω ), σ opt ( ω ), 1/( n 2 −1)) of the CrSi 2 A-type epitaxial films 100 nm thick, grown by template method, have been studied by transmittance and r
Publikováno v:
Scopus-Elsevier
Spectral and integrated photoconductivities in chromium-disilicide epitaxial films grown on single-layer silicon substrates have been studied in the photon energy range 0.5–1.6 eV. The region of the photoconductivity maximum observed at 1.23 eV cor