Zobrazeno 1 - 6
of 6
pro vyhledávání: '"A S Zubrilov"'
Autor:
Vyacheslav A. Elyukhin, Mark Holtz, A. S. Zubrilov, Vladimir Dmitriev, S. N. G. Chu, Henryk Temkin, V. G. Antipov, Irina P. Nikitina, Luis Grave de Peralta, N. N. Faleev, S. Francoeur, Andrei Nikolaev, T. Prokofyeva, G. A. Seryogin, Yuriy Melnik, Sergey A. Nikishin
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 5:467-473
We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130−1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e21b58c05bea501fd0e3fea74dc7f3b
https://doi.org/10.1557/s1092578300004658
https://doi.org/10.1557/s1092578300004658
Autor:
E.V. Kalinina, G.F. Kholujanov, D. Tsvetkov, V.A. Soloviev, A. S. Zubrilov, V.D. Tretjakov, Vladimir A. Dmitriev, Hua-Shuang Kong, M.P. Vatnik
Publikováno v:
Materials Science and Engineering: B. 46:259-262
Electrical and luminescent characteristics of epitaxial 4H-SiC p-n junctions, both prior and after ion doping (ID) with Al, were studied. The implantation of Al ions was performed in the top p-layer of the epitaxial p-n structures. It was found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42b321d4b5caa5dbd97bbd27e848e39b
https://doi.org/10.1016/s0921-5107(96)01988-5
https://doi.org/10.1016/s0921-5107(96)01988-5
Autor:
L. Grave de Peralta, K. Choi, G. Kipshidze, Yu. Kudryavtsev, Rene Asomoza, Sergey A. Nikishin, Henryk Temkin, Vladimir Kuryatkov, A. S. Zubrilov, Mark Holtz, T. Prokofyeva, Iu. Gherasoiu
Publikováno v:
Scopus-Elsevier
We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures resulting in thick layers of AlxGa1−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fc05710d1dd6fca7bccc16c42115a04
https://doi.org/10.1557/proc-639-g11.37
https://doi.org/10.1557/proc-639-g11.37
Autor:
G. Kipshidze, Yu. Kudryavtsev, Kisik Choi, Rene Asomoza, Mark Holtz, Iu. Gherasoiu, V. Tretyakov, Vladimir Kuryatkov, A. S. Zubrilov, T. Prokofyeva, Sergey A. Nikishin, Henryk Temkin, K. Copeland, L. Grave de Peralta
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1409
Layers of AlxGa1−xN, with 0⩽x⩽1, were grown on Si(111) substrates by gas source molecular beam epitaxy with ammonia. We show that the initial formation of the Si–N–Al interlayer between the Si substrate and the AlN layer, at a growth temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb31187087cc73f8f253251e2a9655ee
https://doi.org/10.1116/1.1377590
https://doi.org/10.1116/1.1377590
Autor:
V V Voronenkov, A A Leonidov, N I Bochkareva, R I Gorbunov, P E Latyshev, Y S Lelikov, V S Kogotkov, A S Zubrilov, Y G Shreter
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1199 Issue 1, p1-1, 1p
Autor:
Irina P. Nikitina, V. G. Antipov, Sergey A. Nikishin, T. Prokofyeva, S. N. G. Chu, Vyacheslav A. Elyukhin, Yuriy Melnik, Mark Holtz, S. Francoeur, G. A. Seryogin, N. N. Faleev, Henryk Temkin, Vladimir Dmitriev, Luis Grave de Peralta, A. S. Zubrilov, Andrei Nikolaev
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
We describe the growth of high quality AlN and GaN on Si(111) by gas source molecular beam epitaxy (GSMBE) with ammonia (NH3). The initial nucleation (at 1130-1190K) of an AlN monolayer with full substrate coverage resulted in a very rapid transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5a34400703fb5fed98511c0c6522884
http://www.scopus.com/inward/record.url?eid=2-s2.0-3242762226&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-3242762226&partnerID=MN8TOARS
