Zobrazeno 1 - 10
of 31
pro vyhledávání: '"A S Shulakov"'
Publikováno v:
Technical Physics Letters. 41:922-925
—Investigation of the energy distribution of occupied states in the valence band and determination of its upper level in films of amorphous Al2O3 and γ-Al2O3, synthesized by atomic layer deposition on a silicon substrate, was performed by X-ray ph
Autor:
Yu. S. Dedkov, R. E. Ovcharenko, E. P. Savinov, I. I. Tupitsyn, A. S. Shulakov, Elena Voloshina
Publikováno v:
Journal of Experimental and Theoretical Physics. 118:11-17
A procedure is proposed to calculate the shape of the characteristic Xray emission bands of metals with allowance for multielectron effects. The effects of the dynamic screening of a core vacancy by conduc� tion electrons and the Auger effect in th
Autor:
Franz Schaefers, Andrey Sokolov, O. Yu. Vilkov, Elena O. Filatova, Mihaela Gorgoi, Igor V. Kozhevnikov, A. S. Shulakov, Yu V. Yegorova, A. S. Konashuk
Publikováno v:
Microelectronic Engineering. 109:13-16
Graphical abstractDisplay Omitted Air-exposed Sr-rich-SrTiO3/B/Si-ALD systems (B: SiO2, Si3N4 and HfO2) are studied.Surfaces of all the films are carbonate-enriched by SrCO3 compound.Density of films and Si-B interface width depends on the interlayer
Autor:
A. S. Shulakov
Publikováno v:
Journal of Structural Chemistry. 52:1-12
This is a brief review of characteristic X-ray spectroscopy methods used for nondestructive analysis of the atomic chemical composition of solid state materials. The possibilities of emission spectroscopy for atomic and phase chemical analysis of sam
Publikováno v:
Optics and Spectroscopy. 111:940-948
Using the density functional method in the pseudopotential approximation, we calculate the probabilities of X-ray emission transitions and shapes of the L2,3 X-ray emission bands of Mg in crystals of metallic magnesium and monoxide MgO. We have paid
Publikováno v:
Physics of the Solid State. 52:1957-1961
The factors responsible for the poor agreement between the experimental data on the depth of the generation of the Si L2,3 X-ray emission band excited by an electron impact in SiO2 layers and the results of the calculations performed in terms of the
Autor:
Dmitry Marchenko, A. S. Shulakov, Andrey Sokolov, A. A. Ovchinnikov, S. Yu. Tver’yanovich, E. P Savinov, Valeri Afanas'ev, Elena O. Filatova
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 181:206-210
Analysis of interfaces between (1 0 0)Si crystal and 5-nm thin HfO 2 overlayers was conducted and the results obtained by a X-ray photoelectron spectroscopy (XPS) in combination with Ar + ion sputtering were compared to the results obtained by a non-
Publikováno v:
Physics of the Solid State. 51:255-263
The intensities of Si X-ray emission spectra of Si, β-SiC, stishovite, and β-cristobalite crystals are calculated. The wave functions of the initial and final states are obtained in the framework of the density-functional theory with the use of the
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 72:434-438
The history of the development of ultrasoft X-ray emission depth-resolved spectroscopy is briefly reviewed. The results of the investigation of new model nanostructured materials (metal aluminum layers synthesized by atomic layer deposition on the su
Autor:
A. S. Shulakov, S. V. Bukin
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:67-70
The distribution of the phase and chemical composition at an Al2O3/Si interface is studied by depth-resolved ultrasoft x-ray emission spectroscopy. The interface is formed by atomic layer deposition of Al2O3 films of various thicknesses (from several