Zobrazeno 1 - 10
of 10
pro vyhledávání: '"A S Lorenti"'
Autor:
Alicia S Lorenti, Alejandra M Hidalgo, Mariana R Barbich, José Torres, Juan Batalle, María F Izaguirre, María Paula Fiorucci, Víctor Casco, Adrián Gadano, Pablo F Argibay
Publikováno v:
Acta Gastroenterológica Latinoamericana, Vol 36, Iss 2, Pp 66-75 (2006)
Los hepatocitos son células epiteliales polarizadas que, al ser aisladas y cultivadas, pierden la polaridad y las propiedades de célula diferenciada. El cultivo de células hepáticas como esferoides permite obtener estructuras con organización de
Externí odkaz:
https://doaj.org/article/39a8dca8a2f94329923ecd1633a7b88b
Publikováno v:
Materials science forum 897 (2017): 331–334. doi:10.4028/www.scientific.net/MSF.897.331
info:cnr-pdr/source/autori:M. Vivona 1; P. Fiorenza 1; F. Iucolano 2; A. Severino 2; S. Lorenti 2; F. Roccaforte 1/titolo:Properties of SiO2%2F4H-SiC interfaces with an oxide deposited by a high-temperature process/doi:10.4028%2Fwww.scientific.net%2FMSF.897.331/rivista:Materials science forum/anno:2017/pagina_da:331/pagina_a:334/intervallo_pagine:331–334/volume:897
info:cnr-pdr/source/autori:M. Vivona 1; P. Fiorenza 1; F. Iucolano 2; A. Severino 2; S. Lorenti 2; F. Roccaforte 1/titolo:Properties of SiO2%2F4H-SiC interfaces with an oxide deposited by a high-temperature process/doi:10.4028%2Fwww.scientific.net%2FMSF.897.331/rivista:Materials science forum/anno:2017/pagina_da:331/pagina_a:334/intervallo_pagine:331–334/volume:897
This work reports on the physical and electrical characterization of the oxide/semiconductor interface in MOS capacitors with the SiO2 layer deposited by a high temperature process from dichlorosilane and nitrogen-based vapor precursors and subjected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::dfdc4b6745ac4c23e3caa04fbb1a8ad1
Autor:
Lukas K. Swanson, Patrick Fiorenza, Filippo Giannazzo, S. Alessandrino, S. Lorenti, Fabrizio Roccaforte
Publikováno v:
Materials Science Forum. :715-718
This work reports on the morphological, structural and electrical effects of a nitrous oxide (N2O) ambient post-oxidation annealing (POA) of the SiO2/4H-SiC interface. In particular, a conventional electrical characterization of MOS capacitors showed
Autor:
P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1
Publikováno v:
Materials science forum 806 (2015): 143–147. doi:10.4028/www.scientific.net/MSF.806.143
info:cnr-pdr/source/autori:P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1/titolo:Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3/doi:10.4028%2Fwww.scientific.net%2FMSF.806.143/rivista:Materials science forum/anno:2015/pagina_da:143/pagina_a:147/intervallo_pagine:143–147/volume:806
info:cnr-pdr/source/autori:P. Fiorenza 1, M. Vivona 1, L.K. Swanson 1, F. Giannazzo 1, C. Bongiorno 1, S. Di Franco 1, S. Lorenti 2, A. Frazzetto 2, T. Chassagne 3, F. Roccaforte 1/titolo:Probing at nanoscale underneath the gate oxides in 4H-SiC MOS-based devices annealed in N2O and POCI3/doi:10.4028%2Fwww.scientific.net%2FMSF.806.143/rivista:Materials science forum/anno:2015/pagina_da:143/pagina_a:147/intervallo_pagine:143–147/volume:806
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::804750875e15e43c359f713520d2c8eb
https://publications.cnr.it/doc/298575
https://publications.cnr.it/doc/298575
Publikováno v:
Materials science forum 740-742 (2013): 715–718. doi:10.4028/www.scientific.net/MSF.740-742.715
info:cnr-pdr/source/autori:L.K. Swanson, P. Fiorenza, F. Giannazzo, S. Alessandrino, S. Lorenti, F. Roccaforte/titolo:Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2%2F4H-SiC interfaces/doi:10.4028%2Fwww.scientific.net%2FMSF.740-742.715/rivista:Materials science forum/anno:2013/pagina_da:715/pagina_a:718/intervallo_pagine:715–718/volume:740-742
info:cnr-pdr/source/autori:L.K. Swanson, P. Fiorenza, F. Giannazzo, S. Alessandrino, S. Lorenti, F. Roccaforte/titolo:Effects of a post-oxidation annealing in nitrous oxide on the morphological and electrical properties of SiO2%2F4H-SiC interfaces/doi:10.4028%2Fwww.scientific.net%2FMSF.740-742.715/rivista:Materials science forum/anno:2013/pagina_da:715/pagina_a:718/intervallo_pagine:715–718/volume:740-742
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::f8cbaeaba928992c807a787d4d2ca8de
https://publications.cnr.it/doc/212043
https://publications.cnr.it/doc/212043
Autor:
Alicia S, Lorenti, Alejandra M, Hidalgo, Mariana R, Barbich, José, Torres, Juan, Batalle, María F, Izaguirre, María Paula, Fiorucci, Víctor, Casco, Adrián, Gadano, Pablo F, Argibay
Publikováno v:
Acta gastroenterologica Latinoamericana. 36(2)
Hepatocytes are epithelial cells that show a complex polarity in vivo. However, hepatocytes isolated and cultured in vitro normally lose both their differentiated properties and polarity. Culturing hepatocyte spheroids seems to be the accurate approa
Autor:
A S, Lorenti
Publikováno v:
Medicina. 61(5 Pt 1)
The presence of hepatic stem cells had been postulated for a long time, until several papers on the pathogenesis of hepatic diseases have recently revealed their presence. Hepatocytes belonging to liver parenchyma show morphological, biochemical and
Publikováno v:
Journal of applied physics 108 (2010): 023701-1–023701-7. doi:10.1063/1.3463381
info:cnr-pdr/source/autori:Puglisi RA; Vecchio C; Lombardo S; Lorenti S; Camalleri MC/titolo:Charge transport in ultrathin silicon rich oxide%2FSiO2 multilayers under solar light illumination and in dark conditions/doi:10.1063%2F1.3463381/rivista:Journal of applied physics/anno:2010/pagina_da:023701-1/pagina_a:023701-7/intervallo_pagine:023701-1–023701-7/volume:108
info:cnr-pdr/source/autori:Puglisi RA; Vecchio C; Lombardo S; Lorenti S; Camalleri MC/titolo:Charge transport in ultrathin silicon rich oxide%2FSiO2 multilayers under solar light illumination and in dark conditions/doi:10.1063%2F1.3463381/rivista:Journal of applied physics/anno:2010/pagina_da:023701-1/pagina_a:023701-7/intervallo_pagine:023701-1–023701-7/volume:108
An extensive study on the electrical properties of Si nanocrystals under dark and solar light exposure in AM1.5G conditions is presented. The nanostructures have been obtained through chemical vapor deposition of multilayers of ultrathin silicon rich
Publikováno v:
The Journal of burn carerehabilitation. 10(3)
We present a new laboratory method to test the sensibility of clinically isolated strains to topical agents. It is a method of dilution of the whole cream in a solid medium. The cream is weighted, suspended in sterile water, and maintained at 45 degr
Publikováno v:
Revista Argentina de microbiologia. 12(1)
By means of electron microscope it was demonstrated that photosynthetically-grown Rhodopseudomonas palustris exhibits an intracytoplasmic membrane system (Figure 1a), which is not observed in aerobically-dark grown bacteria (Figure 1b). The content o