Zobrazeno 1 - 9
of 9
pro vyhledávání: '"A S Kozhuhov"'
Publikováno v:
2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Autor:
V. A. Gaisler, D. V. Scheglov, I. A. Derebezov, M. M. Kachanova, A. V. Gaisler, A. I. Toropov, Anton Latyshev, A. S. Kozhuhov, Yu. A. Zhivodkov, Dmitriy V. Dmitriev
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 56:518-526
The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor physics of SB RAS ov
Autor:
Vladimir G. Mansurov, V. Yu. Davydov, K. S. Zhuravlev, A. S. Kozhuhov, D. S. Milakhin, Yu. G. Galitsyn, Alexander N. Smirnov, V. V. Ratnikov, Timur V. Malin
Publikováno v:
Semiconductors. 52:789-796
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of
Autor:
A. M. Gilinsky, A. S. Kozhuhov, Eugene B. Yakimov, Vladimir G. Mansurov, D. Yu. Protasov, Timur V. Malin, K. S. Zhuravlev
Publikováno v:
Semiconductors. 49:1285-1289
The room-temperature diffusion length of minority carriers in n-Al0.1Ga0.9N layers grown by ammonia molecular beam epitaxy on sapphire (0001) substrates used in structures for ultraviolet photodetectors is studied. Measurements were performed using t
Autor:
V. A. Gaisler, V. K. Sandyrev, M. M. Kachanova, A. S. Medvedev, D. V. Shcheglov, Yu. A. Zhivodkov, A. K. Kalagin, Anton Latyshev, A. V. Gaisler, A. K. Bakarov, A. S. Jaroshevich, A. I. Toropov, Dmitriy V. Dmitriev, K. V. Grachev, I. A. Derebezov, A. L. Aseev, V. M. Shayahmetov, A. S. Kozhuhov, L. A. Nenasheva, T. A. Gavrilova
Publikováno v:
Semiconductors. 49:33-38
A semiconductor Bragg microcavity structure for single photon emitters is designed and implemented. The design provides the efficient current pumping of selectively positioned InAs quantum dots within a micrometer-size aperture, high external quantum
Autor:
T. A. Duda, Larisa L. Sveshnikova, Dmitry Yu. Protasov, Sergei A. Teys, Anton S. Kozhuhov, Konstantin S. Zhuravlev, Kirill A. Svit, Wen-Bin Jian
Publikováno v:
The Journal of Physical Chemistry C. 115:20148-20152
Aggregation clusters of CdS quantum dots (QDs) on the highly ordered pyrolytic graphite substrate were investigated by atomic force microscopy and scanning tunneling microscopy. QDs were initially ...
Publikováno v:
Journal of Physics: Conference Series. 741:012042
The thermal roughening of epitaxial GaAs film surface is studied under anneals at temperatures 700-775 °C in the presence of a saturated Ga-As melt. Surface roughening consists in the formation of spiral "inverted pyramids" on the initially flat sur
Publikováno v:
European Journal of Heart Failure Supplements. 3:18
Publikováno v:
Journal of Physics: Conference Series; 2018, Vol. 993 Issue 1, p1-1, 1p