Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A R M Yusoff"'
Autor:
K. V. Annammala, N. A. Mohamad, D. Sugumaran, L. S. Masilamani, Y. Q. Liang, M. H. Jamal, Z. Yusop, A. R. M. Yusoff, A. Nainar
Publikováno v:
Hydrology Research, Vol 52, Iss 1, Pp 91-106 (2021)
This study seeks to identify sediment sources, quantify erosion rates, and assess water quality status via sediment fingerprinting, the Modified Laser Erosion Bridge (MLEB) method, and various pollution indices (PIs), respectively, in the humid tropi
Externí odkaz:
https://doaj.org/article/47bd8d99e96c4d8fabb02143c68c06f8
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 1151:012004
Kampong Bharu is situated in Kuala Lumpur, Malaysia and is categorised as a high commercial land located in the ‘Golden Triangle.’ However, this place is still left behind in terms of development as it is reported that there are more than RM60 bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81bc3a17d351e4ccef634bd684e6d5a
https://doi.org/10.1088/1755-1315/1151/1/012004
https://doi.org/10.1088/1755-1315/1151/1/012004
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1144:012018
The utilization of river sand for miscellaneous construction purposes had directly increased due to rapid growth of construction industry. This fact caused over exploitation of riverbeds and troubled the eco-system. This study aims to find out the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c83cd3dabdd022a47c735ecddc92785
https://doi.org/10.1088/1757-899x/1144/1/012018
https://doi.org/10.1088/1757-899x/1144/1/012018
Publikováno v:
Pramana. 69:285-300
Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb53a93ccf98eff44a05c8acf249e703
https://doi.org/10.1007/s12043-007-0129-y
https://doi.org/10.1007/s12043-007-0129-y
Publikováno v:
Pramana. 68:995-999
Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (V oc ) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H 2 -plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcdc84585f8e6aa6933cd4df7011801f
https://doi.org/10.1007/s12043-007-0098-1
https://doi.org/10.1007/s12043-007-0098-1
Publikováno v:
Superconductor Science and Technology. 18:912-915
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199750e99274d99e341bd22af746a437
https://doi.org/10.1088/0953-2048/18/6/020
https://doi.org/10.1088/0953-2048/18/6/020
Autor:
W.H. Abd. Majid, A. R. M. Yusoff
Publikováno v:
The European Physical Journal B. 45:33-37
The pyroelectric behavior and dielectric properties of a superlattice containing a Langmuir-Blodgett (LB) film of alternately monomeric eicosylamine and linear copolysiloxane substituted with aromatic acid side chains have been investigated in the te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4bbce0b6133ddfb43e569d54ac03ddb
https://doi.org/10.1140/epjb/e2005-00161-0
https://doi.org/10.1140/epjb/e2005-00161-0
Publikováno v:
Bulletin of Materials Science. 30:329-331
A major issue encountered during fabrication of triple junction a-Si solar cells on polyimide substrates is the adhesion of the solar cell thin films to the substrates. Here, we present our study of film adhesion in amorphous silicon solar cells made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68237aac00aff9666d435f406c8bd654
https://doi.org/10.1007/s12034-007-0054-1
https://doi.org/10.1007/s12034-007-0054-1
Publikováno v:
Pramana. 81:1069-1069
Hydrogenated amorphous silicon (a-Si:H) single junction solar cells with high open circuit voltage (V oc) are fabricated using a wide bandgap boron-doped Si:H p-layer deposited at high hydrogen dilution, low substrate temperature and with H2-plasma t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653c1851457d1f9d7e0b20a2ab990ddd
https://doi.org/10.1007/s12043-013-0514-7
https://doi.org/10.1007/s12043-013-0514-7
Publikováno v:
Pramana. 81:1071-1071
Hydrogenated nanocrystalline silicon germanium thin films (nc-SiGe:H) is an interesting alternative material to replace hydrogenated nanocrystalline silicon (nc-Si:H) as the narrow bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc-Si) triple-junction sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c144696b0709632019de92c34cf0ade9
https://doi.org/10.1007/s12043-013-0515-6
https://doi.org/10.1007/s12043-013-0515-6