Zobrazeno 1 - 10
of 901
pro vyhledávání: '"A O Chua"'
Autor:
N. Schmitt, A. Ascoli, I. Messaris, A. S. Demirkol, S. Menzel, V. Rana, R. Tetzlaff, L. O. Chua
Publikováno v:
Frontiers in Nanotechnology, Vol 6 (2024)
Fading memory is the capability of a physical system to approach a unique asymptotic behaviour, irrespective of the initial conditions, when stimulated by an input from a certain class. Standard stimuli from the AC periodic class typically induce fad
Externí odkaz:
https://doaj.org/article/b923324d01bf438c9fde5230e39f97f6
Publikováno v:
Frontiers in Electronic Materials, Vol 3 (2023)
Memristive devices are the subject of extensive studies nowadays. While the Dynamic Route Map is a powerful tool for analyzing the response of first-order memristors under DC stimuli, the development of an equivalent tool for investigating the respon
Externí odkaz:
https://doaj.org/article/c733671797334791826005ffcc01cfe8
Autor:
Juan B. Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia B. González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance ha
Externí odkaz:
https://doaj.org/article/8abc1b18881346218ff8c2bbe6e7d4a8
Autor:
Francesco Marrone, Jacopo Secco, Benedikt Kersting, Manuel Le Gallo, Fernando Corinto, Abu Sebastian, Leon O. Chua
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Phase Change Memory (PCM) is an emerging technology exploiting the rapid and reversible phase transition of certain chalcogenides to realize nanoscale memory elements. PCM devices are being explored as non-volatile storage-class memory and a
Externí odkaz:
https://doaj.org/article/da5545798b074dc19d28b60971bc615d
Autor:
Rodrigo Picos, Mohamad Moner Al Chawa, Carola De Benito, Stavros G. Stavrinides, Leon O. Chua
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 466-473 (2022)
Memristors were first proposed in 1971 by Leon Chua. These devices are usually regarded as being one of the newest fundamental breakthrough for electronics. Their role in designing new electronic systems is expected to be an important, key-factor. As
Externí odkaz:
https://doaj.org/article/dd335d60bd694486a280f9deb6fca011
Publikováno v:
International Journal of Research in Medical Sciences. 11:2261-2265
Mills’ syndrome is an idiopathic, slowly progressive, spastic hemiparetic variant of primary lateral sclerosis (PLS). Despite this classic definition, this syndrome has recently been suggested to be present on all the variants of motor neuron disea
Autor:
Alon Ascoli, Ahmet S. Demirkol, Ronald Tetzlaff, Stefan Slesazeck, Thomas Mikolajick, Leon O. Chua
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
Local activity is the capability of a system to amplify infinitesimal fluctuations in energy. Complex phenomena, including the generation of action potentials in neuronal axon membranes, may never emerge in an open system unless some of its constitut
Externí odkaz:
https://doaj.org/article/c399ea9f938346b0abe0ed8540fc321a
Publikováno v:
IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 12:804-820
Autor:
Juan B. Roldán, Gerardo González-Cordero, Rodrigo Picos, Enrique Miranda, Félix Palumbo, Francisco Jiménez-Molinos, Enrique Moreno, David Maldonado, Santiago B. Baldomá, Mohamad Moner Al Chawa, Carol de Benito, Stavros G. Stavrinides, Jordi Suñé, Leon O. Chua
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1261 (2021)
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS) operation and exhibit a set of technological features that make them ideal candidates for applications related to non-volatile memories, neuromorphic computing and hardwar
Externí odkaz:
https://doaj.org/article/670f5a8cdd6e4908b7b564222329d6dc
Publikováno v:
IEEE Access, Vol 5, Pp 1284-1295 (2017)
In order to explore the coupling inter-relationship between two closely placed memristors (MRs), a new circuit for emulating MRs is proposed. The coupling behavior between closely placed MRs is achieved by making use of the inductive coupling propert
Externí odkaz:
https://doaj.org/article/117b4b6e6d13401c89d910f7460987ce