Zobrazeno 1 - 10
of 31
pro vyhledávání: '"A N. Pyatlitski"'
Autor:
P. A. Kholov, N. V. Gaponenko, K. V. Shaidakova, V. I. Krymski, V. A. Filipenya, T. V. Petlitskaya, V. V. Kolos, A N. Pyatlitski
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 1, Pp 74-80 (2020)
The objective of the work is investigation the dielectric permittivity and dielectric loss tangent of BaTiO3 films in a capacitor structure formed by sol – gel method on a Si/TiOx/Pt substrate. The basis of this capacitor is a four-layer film of ba
Externí odkaz:
https://doaj.org/article/96b1f395a79e44028a37d912887eb71d
Autor:
Vladimir B. Odzaev, Aliaksandr N. Pyatlitski, Uladislau S. Prasalovich, Natalya S. Kovalchuk, Yaroslav A. Soloviev, Dmitry V. Shestovski, Valentin Yu. Yavid, Yuri N. Yankovski
Publikováno v:
Journal of the Belarusian State University. Physics. :81-92
The electrical characteristics of power MOSFETs additionally implanted with nitrogen ions have been studied. Ion implantation of nitrogen was carried out through a protective oxide of 23 nm thickness with energies of 20 and 40 keV and doses of 1 ⋅
Autor:
V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, N. S. Kovalchuk, Ya. A. Soloviev, D. V. Zhygulin, D. V. Shestovsky, Yu. N. Yankovski, D. I. Brinkevich
Publikováno v:
Journal of Applied Spectroscopy. 89:665-670
Autor:
V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, N. S. Kovalchuk, Ya. A. Soloviev, D. V. Zhygulin, D. V. Shestovsky, Yu. N. Yankovski, D. I. Brinkevich
Publikováno v:
Journal of Applied Spectroscopy. 89:498-504
We studied the behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates by the attenuated total reflection (ATR) method and time-of-flight secondary ion mass spectrometry. Nitrogen was introduced into a dielectric formed by
Autor:
V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski
Publikováno v:
Pribory i Metody Izmerenij, Vol 6, Iss 1, Pp 94-98 (2015)
There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A an
Externí odkaz:
https://doaj.org/article/442b6cc88a7e48a0a831e2a4a14d1b3a
Autor:
V. Yu. Yavid, V. B. Odzaev, D. V. Shestovski, V. A. Pilipenko, U. S. Prosolovich, Yu.N. Yankovski, V. A. Filipenia, A. N. Pyatlitski
Publikováno v:
Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 57:232-241
Herein, the temperature dependences of the static current gain (β) of bipolar n-p-n-transistors, formed by similar process flows (series A and B), in the temperature range 20–125 °С was investigated. The content of uncontrolled technological imp
Publikováno v:
Journal of Applied Spectroscopy. 87:1072-1078
Radiation-induced effects in thin films of diazoquinone–novolac photoresists on silicon irradiated with high-energy electrons (~5 MeV) were investigated by frustrated total internal reflection (FTIR) IR Fourier spectroscopy. It was found that irrad
Autor:
Aliaksandr N. Pyatlitski, Dmitry V. Shestovski, Uladislau S. Prasalovich, Viktar A. Filipenia, Anatoli K. Panfilenka, N. S. Kovalchuk, Vladimir B. Odzaev, Yaroslav A. Soloviev
Publikováno v:
Journal of the Belarusian State University. Physics. :55-64
Power MOS-transistors with vertical structure are investigated. Additionally, in some devices, ion implantation of nitrogen with energies of 20 and 40 keV was carried out in a dose range of 1 ⋅1013–5 ⋅ 1014 cm –2 through a sacrificial oxide 2
Autor:
A. N. Pyatlitski, V. S. Prosolovich, S. D. Brinkevich, R. L. Sverdlov, D. I. Brinkevich, E. V. Grinyuk
Publikováno v:
Journal of Applied Spectroscopy. 87:647-651
Fourier-transform infra-red spectroscopy with frustrated total internal reflection was used to study radiation-induced processes upon the implantation of boron and phosphorus ions into positive FP9120 diazoquinone-novolac photoresist films on silicon
Autor:
Ja. А. Solovjov, D. V. Zhyhulin, A. N. Pyatlitski, E. V. Lutsenko, A. G. Vainilovich, M. V. Rzheutski, I. E. Svitsiankou
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 144-151 (2019)
In order to develop a technology for the growth of Al(Ga)N-based heterostructures, the effect of different molecular beam epitaxy growth conditions on the properties of AlN and AlGaN layers was studied. The optimal conditions for the growth of AlN bu