Zobrazeno 1 - 10
of 1 009
pro vyhledávání: '"A N Knyazev"'
Publikováno v:
RUDN Journal of Philosophy, Vol 27, Iss 4, Pp 901-914 (2023)
The study examines a problematic hypothesis of possible approaches to identifying the quantum physical foundations of the functioning of consciousness. The authors proceed from the fact that in modern conditions, not a single science, nor all science
Externí odkaz:
https://doaj.org/article/3eda76bc732648b2b85100433ccda0a1
Autor:
N.M. Przhevalskiy
Publikováno v:
Izvestiâ Timirâzevskoj selʹskohozâjstvennoj akademii. :158-161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a276ba727c8fba3a7ef6898517c2e1f
https://doi.org/10.26897/0021-342x-2017-4-158-161
https://doi.org/10.26897/0021-342x-2017-4-158-161
Autor:
Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Nikita Yu. Komarovskiy, Irina B. Parfent'eva, Evgeniya V. Chernyshova
Publikováno v:
Modern Electronic Materials, Vol 9, Iss 2, Pp 69-76 (2023)
The optical and electrical properties of zinc-doped Cz p-GaAs have been studied. Reflection spectra of ten p-GaAs specimens have been taken in the mid-IR region. Van der Pau galvanomagnetic, electrical resistivity and Hall coefficient measurements ha
Externí odkaz:
https://doaj.org/article/e98927c2b96a4bb1bfe0caa90639289a
Autor:
Stanislav N. Knyazev, Aleksandr V. Kudrya, Nikita Yu. Komarovskiy, Yuri N. Parkhomenko, Elena V. Molodtsova, Vyacheslav V. Yushchuk
Publikováno v:
Modern Electronic Materials, Vol 8, Iss 4, Pp 131-140 (2022)
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc
Externí odkaz:
https://doaj.org/article/2fa4a65b375b4430b0b0807ab90396ed
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev, Irina B. Parfent'eva
Publikováno v:
Modern Electronic Materials, Vol 7, Iss 3, Pp 79-84 (2021)
A theoretical model has been developed for determining the free electron concentration in n-InAs specimens from characteristic points in far IR reflection spectra. We show that this determination requires plasmon-phonon coupling be taken into account
Externí odkaz:
https://doaj.org/article/1243a2d6f3114828a3ee1bb2993d629e
Autor:
Tatyana G. Yugova, Aleksandr G. Belov, Vladimir E. Kanevskii, Evgeniya I. Kladova, Stanislav N. Knyazev
Publikováno v:
Modern Electronic Materials, Vol 6, Iss 3, Pp 85-89 (2020)
A theoretical model has been developed for determining free electron concentration in n-GaAs from characteristic points in the far infrared region of reflection spectra. We show that when determining free electron concentration one should take into a
Externí odkaz:
https://doaj.org/article/d83dbe80d4ea493e908cb205ef5436ff
Autor:
Dmitry M. Murin, Vladimir N. Knyazev
Publikováno v:
Моделирование и анализ информационных систем, Vol 26, Iss 2, Pp 244-255 (2019)
This paper is a logical continuation of the paper about possible approaches to solving the “Useful Proof-of-work for blockchains” problem. We suggest some alternative ways for searching useful tasks for Proof-of-work systems. These ways are based
Externí odkaz:
https://doaj.org/article/84fab4470f414b2a8c5da4898550a5e5
Autor:
V. N. Knyazev
Publikováno v:
Wounds and wound infections. The prof. B.M. Kostyuchenok journal. 9:8-19
The present review outlines features of a staged surgical tactics in treating battle and non-battle injuries in military medicine and disaster medicine. The problem of surgical infections in lightly wounded patients and the effectiveness of ozone the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025d940ab52f6824029126f6abf73bf5
https://doi.org/10.25199/2408-9613-2022-9-3-6-17
https://doi.org/10.25199/2408-9613-2022-9-3-6-17
Autor:
S. N. Knyazev, A. V. Kudrya, N. Yu. Komarovskiy, Yu. N. Parkhomenko, E. V. Molodtsova, V. V. Yushchuk
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 25:323-336
The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f9a2929448e64b0bcc978f74d1b9b9
https://doi.org/10.17073/1609-3577-2022-4-323-336
https://doi.org/10.17073/1609-3577-2022-4-323-336
Publikováno v:
Sučasnì Informacìjnì Tehnologìï u Sferì Bezpeki ta Oboroni, Vol 33, Iss 3, Pp 119-126 (2018)
На основі опублікованих джерел, а також особистого досвіду військової служби авторів, досліджуються особливості порядку розрахунку по
Externí odkaz:
https://doaj.org/article/bb07df18d4e942a2993072acad29d939