Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A N A Aznan"'
Publikováno v:
PLoS ONE, Vol 10, Iss 10, p e0141180 (2015)
The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 1019 cm-3 are well-d
Externí odkaz:
https://doaj.org/article/612ca71c82a54cc4b9e902f82543a3f2
Publikováno v:
Materials Science Forum. 864:175-179
This study focused on the formation and growth of intermetallic compound (IMC) layer at the interfaces of pad finishes. The thickness of IMC layer, wetting angle, and defects such as floating IMC and voids formation after as reflow and isothermal agi
Publikováno v:
AIP Conference Proceedings.
ZnO thin films doped with various amounts of In impurities were prepared by magnetron sputtering at a substrate temperature of 150°C. The shift in optical bandgap of the In-doped ZnO films is studied as a function of carrier concentration. Nominally
New Insights on the Burstein-Moss Shift and Band Gap Narrowing in Indium-Doped Zinc Oxide Thin Films
Publikováno v:
PLoS ONE, Vol 10, Iss 10, p e0141180 (2015)
PLoS ONE
PLoS ONE
The Burstein-Moss shift and band gap narrowing of sputtered indium-doped zinc oxide (IZO) thin films are investigated as a function of carrier concentrations. The optical band gap shifts below the carrier concentration of 5.61 × 1019 cm-3 are well-d
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Jan2018, Vol. 290 Issue 1, p1-1, 1p