Zobrazeno 1 - 10
of 949
pro vyhledávání: '"A Mkhoyan"'
Autor:
Ghosh, Supriya, Mkhoyan, K. Andre
Since an ion-beam is a viable attractive alternative to other material surface patterning techniques like an electron-beam, a study of the structure, composition and dimension of patterned lines created on surfaces of Si and SrTiO3 wafers with a Ga i
Externí odkaz:
http://arxiv.org/abs/2408.02995
Autor:
Liu, Fengdeng, Yang, Zhifei, Abramovitch, David, Guo, Silu, Mkhoyan, K. Andre, Bernardi, Marco, Jalan, Bharat
Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparen
Externí odkaz:
http://arxiv.org/abs/2405.08915
Autor:
Islam, Saurav, Steinebronn, Emma, Yang, Kaijie, Neupane, Bimal, Chamorro, Juan, Ghosh, Supriya, Mkhoyan, K. Andre, McQueen, Tyrel M., Wang, Yuanxi, Liu, Chaoxing, Samarth, Nitin
We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnet
Externí odkaz:
http://arxiv.org/abs/2403.18485
Plan-view transmission electron microscopy (TEM) samples are key to understand the atomic structure and associated properties of materials along their growth orientation, especially for thin films that are stain-engineered onto different substrates f
Externí odkaz:
http://arxiv.org/abs/2401.02538
Autor:
Ou, Yongxi, Yanez-Parreño, Wilson, Huang, Yu-sheng, Ghosh, Supriya, Şahin, Cüneyt, Stanley, Max, Santhosh, Sandra, Islam, Saurav, Richardella, Anthony, Mkhoyan, K. Andre, Flatté, Michael E., Samarth, Nitin
Bulk-boundary correspondence is a foundational principle underlying the electronic band structure and physical behavior of topological quantum materials. Although it has been rigorously tested in topological systems where the physical properties invo
Externí odkaz:
http://arxiv.org/abs/2311.11933
Autor:
Huang, Yu-Sheng, Islam, Saurav, Ou, Yongxi, Ghosh, Supriya, Richardella, Anthony, Mkhoyan, K. Andre, Samarth, Nitin
Publikováno v:
APL Mater. 12, 021106 (2024)
We report the molecular beam epitaxy of Bi_1-xSb_x thin films ($0 \leq x \leq 1$) on (0001) sapphire substrates using a thin (Bi,Sb)$_2$Te$_3$ buffer layer. Characterization of the films using reflection high energy diffraction, x-ray diffraction, at
Externí odkaz:
http://arxiv.org/abs/2311.11899
Autor:
Varshney, Shivasheesh, Choo, Sooho, Thompson, Liam, Yang, Zhifei, Shah, Jay, Wen, Jiaxuan, Koester, Steven J., Mkhoyan, K. Andre, McLeod, Alexander, Jalan, Bharat
The advancement in thin-film exfoliation for synthesizing oxide membranes has opened up new possibilities for creating artificially-assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a
Externí odkaz:
http://arxiv.org/abs/2311.11448
Autor:
Chung-Tao Chou, Supriya Ghosh, Brooke C. McGoldrick, Thanh Nguyen, Gautam Gurung, Evgeny Y. Tsymbal, Mingda Li, K. Andre Mkhoyan, Luqiao Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Efficient detection of the magnetic state is a critical step towards useful antiferromagnet-based spintronic devices. Recently, finite tunneling magnetoresistance (TMR) has been demonstrated in tunnel junctions with antiferromagnetic electro
Externí odkaz:
https://doaj.org/article/f346632ab5e044649910c6ce995f04b7
Autor:
Zhang, Delin, Jiang, Wei, Yun, Hwanhui, Benally, Onri Jay, Peterson, Thomas, Cresswell, Zach, Fan, Yihong, Lv, Yang, Yu, Guichuan, Barriocanal, Javier Garcia, Swatek, Przemyslaw, Mkhoyan, K. Andre, Low, Tony, Wang, Jian-Ping
Publikováno v:
Nature Communications volume 14, Article number: 4151 (2023)
Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties f
Externí odkaz:
http://arxiv.org/abs/2305.05801
Autor:
Yanez, Wilson, Huang, Yu-Sheng, Ghosh, Supriya, Islam, Saurav, Steinebronn, Emma, Richardella, Anthony, Mkhoyan, K. Andre, Samarth, Nitin
We report the synthesis and characterization of thin films of the Weyl semimetal NbAs grown on GaAs (100) and GaAs (111)B substrates. By choosing the appropriate substrate, we can stabilize the growth of NbAs in the (001) and (100) directions. We com
Externí odkaz:
http://arxiv.org/abs/2304.13959