Zobrazeno 1 - 10
of 3 624
pro vyhledávání: '"A Minnich"'
Autor:
Munoz, Gary D. Lopez, Minnich, Amanda J., Lutz, Roman, Lundeen, Richard, Dheekonda, Raja Sekhar Rao, Chikanov, Nina, Jagdagdorj, Bolor-Erdene, Pouliot, Martin, Chawla, Shiven, Maxwell, Whitney, Bullwinkel, Blake, Pratt, Katherine, de Gruyter, Joris, Siska, Charlotte, Bryan, Pete, Westerhoff, Tori, Kawaguchi, Chang, Seifert, Christian, Kumar, Ram Shankar Siva, Zunger, Yonatan
Generative Artificial Intelligence (GenAI) is becoming ubiquitous in our daily lives. The increase in computational power and data availability has led to a proliferation of both single- and multi-modal models. As the GenAI ecosystem matures, the nee
Externí odkaz:
http://arxiv.org/abs/2410.02828
Autor:
Hatanpää, Benjamin, Minnich, Austin J.
Cubic boron nitride (c-BN) is an ultrawide-bandgap semiconductor of significant interest for high-frequency and high-power electronics applications owing to its high saturation drift velocity and high electric breakdown field. Beyond transistors, dev
Externí odkaz:
http://arxiv.org/abs/2408.08458
Autor:
Haider, Emman, Perez-Becker, Daniel, Portet, Thomas, Madan, Piyush, Garg, Amit, Ashfaq, Atabak, Majercak, David, Wen, Wen, Kim, Dongwoo, Yang, Ziyi, Zhang, Jianwen, Sharma, Hiteshi, Bullwinkel, Blake, Pouliot, Martin, Minnich, Amanda, Chawla, Shiven, Herrera, Solianna, Warreth, Shahed, Engler, Maggie, Lopez, Gary, Chikanov, Nina, Dheekonda, Raja Sekhar Rao, Jagdagdorj, Bolor-Erdene, Lutz, Roman, Lundeen, Richard, Westerhoff, Tori, Bryan, Pete, Seifert, Christian, Kumar, Ram Shankar Siva, Berkley, Andrew, Kessler, Alex
Recent innovations in language model training have demonstrated that it is possible to create highly performant models that are small enough to run on a smartphone. As these models are deployed in an increasing number of domains, it is critical to en
Externí odkaz:
http://arxiv.org/abs/2407.13833
Atomic layer etching of SiO$_2$ using sequential exposures of Al(CH$_3$)$_3$ and H$_2$/SF$_6$ plasma
On-chip photonic devices based on SiO$_2$ are of interest for applications such as microresonator gyroscopes and microwave sources. Although SiO$_2$ microdisk resonators have achieved quality factors exceeding one billion, this value remains an order
Externí odkaz:
http://arxiv.org/abs/2405.05491
Autor:
Kamakari, Hirsh, Sun, Jiace, Li, Yaodong, Thio, Jonathan J., Gujarati, Tanvi P., Fisher, Matthew P. A., Motta, Mario, Minnich, Austin J.
Quantum systems subject to random unitary evolution and measurements at random points in spacetime exhibit entanglement phase transitions which depend on the frequency of these measurements. Past work has experimentally observed entanglement phase tr
Externí odkaz:
http://arxiv.org/abs/2403.00938
Autor:
Chen, Ivy I., Solgaard, Jennifer, Sekine, Ryoto, Hossain, Azmain A., Ardizzi, Anthony, Catherall, David S., Marandi, Alireza, Renzas, James R., Greer, Frank, Minnich, Austin J.
Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device per
Externí odkaz:
http://arxiv.org/abs/2310.10592
Autor:
Hatanpää, Benjamin, Minnich, Austin J.
Ab-initio calculations of charge transport properties in materials without adjustable parameters have provided microscopic insights into electron-phonon interactions which govern charge transport properties. Other transport properties such as the dif
Externí odkaz:
http://arxiv.org/abs/2310.01532
Autor:
Hossain, Azmain A., Wang, Haozhe, Catherall, David S., Leung, Martin, Knoops, Harm C. M., Renzas, James R., Minnich, Austin J.
Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabricat
Externí odkaz:
http://arxiv.org/abs/2307.02821
The transport properties of hot holes in silicon at cryogenic temperatures exhibit several anomalous features, including the emergence of two distinct saturated drift velocity regimes and a non-monotonic trend of the current noise versus electric fie
Externí odkaz:
http://arxiv.org/abs/2306.14986
Autor:
Esho, Iretomiwa, Minnich, Austin J.
The semiconductor BAs has drawn significant interest due to experimental reports of simultaneous high thermal conductivity and ambipolar charge mobility. The \textit{ab~initio} prediction of high electron and hole mobility assumed the dominance of ch
Externí odkaz:
http://arxiv.org/abs/2305.03159