Zobrazeno 1 - 8
of 8
pro vyhledávání: '"A M, Sverdlova"'
Publikováno v:
Semiconductors. 32:1190-1195
A study of charge relaxation processes in metal-insulator-semiconductor structures containing the rare-earth oxides Gd2O3 and Lu2O3 as the insulator has been performed using the deep-level transient spectroscopy (DLTS) method in combination with a st
Publikováno v:
Semiconductors. 31:752-755
The results of experimental studies of the effect of γ-irradiation on the electrical properties of MIS structures containing the rare-earth oxides Y2O3, Dy2O3, Tb2O3, Gd2O3, and Lu2O3 are reported. The static characteristics (current-voltage, capaci
Autor:
N A, Skobeleva, V I, Vasina, M V, Volkova, A M, Sverdlova, E V, Fomicheva, G I, Obraztsova, E I, Talalaeva, Kh, Shakir, M, Laasri, I M, Vorontsov, Iu P, Kovalev, E I, Shvarts
Publikováno v:
Molekuliarnaia genetika, mikrobiologiia i virusologiia. (4)
Polymorphisms of 3 apolipoprotein genes Xba I apoB, Sstl apoCIII, and apoE and the insertion-deletion polymorphism of the angiotensin-converting enzyme gene (I/D ACE) and lipid levels were studied in a random sample of 403 children and adolescents ag
Autor:
A. M. Sverdlova, V. F. Kabanov
Publikováno v:
Semiconductors. 31:531
Autor:
B. M. Sverdlova, S. I. Spirina
Publikováno v:
Soviet Powder Metallurgy and Metal Ceramics. 21:927-931
Publikováno v:
Strength of Materials. 7:1105-1111
Changes in static strength relative to the magnitude, sign, and distribution of the residual stresses were studied in the hard alloys VK15 and VK20. Machining was used to produce surface stresses; annealing was used to eliminate interphase microstres
Publikováno v:
Soviet Materials Science. 8:408-411
Publikováno v:
Soviet Materials Science. 4:511-515
X-ray diffraction measurements were used to study residual stresses in the surface layers of WC-Co specimens after diamond wheel grinding. The presence of compressive macrostresses was established and the mechanism of their formation was considered.