Zobrazeno 1 - 10
of 425
pro vyhledávání: '"A L Shluger"'
Publikováno v:
ACS Omega, Vol 9, Iss 9, Pp 10286-10298 (2024)
Externí odkaz:
https://doaj.org/article/e187cbe6e1354f9e9c01d6b136d1a3d8
Autor:
Jack Strand, Alexander L. Shluger
Publikováno v:
Advanced Science, Vol 11, Iss 8, Pp n/a-n/a (2024)
Abstract Understanding defects in amorphous oxide films and heterostructures is vital to improving performance of microelectronic devices, thin‐film transistors, and electrocatalysis. However, to what extent the structure and properties of point de
Externí odkaz:
https://doaj.org/article/009ec7896a1244b598825e307868b835
Autor:
Vasileios Fotopoulos, David Mora-Fonz, Manuel Kleinbichler, Rishi Bodlos, Ernst Kozeschnik, Lorenz Romaner, Alexander L. Shluger
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1464 (2023)
Voids in face-centered cubic (fcc) metals are commonly assumed to form via the aggregation of vacancies; however, the mechanisms of vacancy clustering and diffusion are not fully understood. In this study, we use computational modeling to provide a d
Externí odkaz:
https://doaj.org/article/01d04daf0f1146a6a5ec0eb97a7e4321
Publikováno v:
APL Materials, Vol 9, Iss 12, Pp 121107-121107-10 (2021)
Columnar microstructures are critical for obtaining good resistance switching properties in SiOx resistive random access memory (ReRAM) devices. In this work, the formation and structure of columnar boundaries are studied in sputtered SiOx layers. Us
Externí odkaz:
https://doaj.org/article/e389a848c3e24c598bd688eef42701f0
Publikováno v:
Physical Chemistry Chemical Physics. 25:9168-9175
Thermodynamic analysis is used to provide limits on the hydrogen-induced vacancy clustering in bulk Cu. Hydrogen molar fraction reaches the same order of magnitude as the vacancy molar fraction only at high pressure and temperature.
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 667-674 (2017)
The challenges and limitations in calculating free energies and entropies of adsorption and interaction of organic molecules on an insulating substrate are discussed. The adhesion of 1,3,5-tri(4'-cyano-[1,1'-biphenyl]-4-yl)benzene (TCB) and 1,4-bis(4
Externí odkaz:
https://doaj.org/article/d8de79ad36a2469795b7dae26f067281
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to aggregation of oxygen vacancies resulting in formation of oxygen depleted regions and cond
Externí odkaz:
https://doaj.org/article/020bdb54bbf643758361e23504dea313
Publikováno v:
The Minerals, Metals & Materials Series ISBN: 9783031225239
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ba68019f63dbb085fdb9fd2d6a7f30
https://doi.org/10.1007/978-3-031-22524-6_93
https://doi.org/10.1007/978-3-031-22524-6_93
Autor:
Laura Hargreaves, Geoff Thornton, George T. Harrison, Hicham Idriss, Immad M. Nadeem, Alexander L. Shluger
Publikováno v:
The Journal of Physical Chemistry C. 125:13770-13779
Understanding the adsorption and photoactivity of acetic acid and trimethyl acetic acid on TiO2 surfaces is important for improving the performance of photocatalysts and dye-sensitized solar cells. Here we present a structural study of adsorption on
Autor:
Anthony J Kenyon, Adnan Mehonic, Wing Ng, Longfei Zhao, Horatio Cox, Mark Buckwell, Kamal Patel, Andrew P Knights, Daniel J Mannion, Alexander L Shluger
Publikováno v:
2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST).