Zobrazeno 1 - 10
of 33
pro vyhledávání: '"A K, Okyay"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 4, Pp 28-34 (2019)
Properties and deposition of continuous thin zinc oxide films by chemical on the monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are studied. Obtained hybrid zinc oxide structures consist of vertically
Externí odkaz:
https://doaj.org/article/8bfda3f7900541c286ea6fa3e535f142
Autor:
Saidjafarzoda Ilhom, Adnan Mohammad, John Grasso, Brian G. Willis, Ali K. Okyay, Necmi Biyikli
Publikováno v:
ACS Applied Electronic Materials. 5:335-343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5666d3a695b2b280d8d807753ae55275
https://doi.org/10.1021/acsaelm.2c01353
https://doi.org/10.1021/acsaelm.2c01353
Publikováno v:
ACS Omega, Vol 2, Iss 11, Pp 8319-8329 (2017)
Externí odkaz:
https://doaj.org/article/8e6dc83bebe04b5b90c79d6c3a22ec52
Autor:
Adnan Mohammad, Krishna D. Joshi, Dhan Rana, Saidjafarzoda Ilhom, Barrett Wells, Brian Willis, Boris Sinkovic, A. K. Okyay, Necmi Biyikli
Publikováno v:
Journal of Vacuum Science & Technology A. 41:032405
Vanadium oxide (VOx) compounds feature various polymorphs, including V2O5 and VO2, with attractive temperature-tunable optical and electrical properties. However, to achieve the desired material property, high-temperature post-deposition annealing of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0fb696caef27848b0ab43b5b296dc50
https://doi.org/10.1116/6.0002383
https://doi.org/10.1116/6.0002383
Publikováno v:
AIP Advances, Vol 4, Iss 7, Pp 077106-077106-7 (2014)
Noble metals such as gold and silver have been extensively used for plasmonic applications due to their ability to support plasmons, yet they suffer from high intrinsic losses. Alternative plasmonic materials that offer low loss and tunability are de
Externí odkaz:
https://doaj.org/article/411ab0bba94344428d951e4ea1eb8bd5
Publikováno v:
AIP Advances, Vol 3, Iss 11, Pp 112116-112116-6 (2013)
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V p
Externí odkaz:
https://doaj.org/article/63c59f33fd3744358d2b09d334e5f70b
Autor:
Nazek El-Atab, Samar Alqatari, Feyza B. Oruc, Tewfic Souier, Matteo Chiesa, Ali K. Okyay, Ammar Nayfeh
Publikováno v:
AIP Advances, Vol 3, Iss 10, Pp 102119-102119-7 (2013)
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition
Externí odkaz:
https://doaj.org/article/30f75175af8d463791e842db317288c3
Publikováno v:
IEEE Photonics Journal, Vol 5, Iss 2, Pp 2200707-2200707 (2013)
We present ZnO-channel thin-film transistors with actively tunable photocurrent in the visible spectrum, although ZnO band edge is in the ultraviolet. ZnO channel is deposited by atomic layer deposition technique at a low temperature (80 °C), which
Externí odkaz:
https://doaj.org/article/04fab514a2c4497e9399e21bc4b5a8e3
Autor:
Ali K. Okyay, Sh. Bagheri Mashhadi, M.J. Hadianfard, Mohammad Ali Ghaffari, Erfan Salahinejad
Publikováno v:
Materials Science and Engineering C
Materials Science and Engineering: C
Materials Science and Engineering: C
Cataloged from PDF version of article. In this paper, chemical composition uniformity in amorphous/nanocrystallization medical-grade stainless steel (ASTM ID: F2581) sintered with a Mn–Si additive was studied via scanning electron microscopy, energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7de2c5331699d1c520f0b8d072fa5dde
https://doi.org/10.1016/j.msec.2012.06.004
https://doi.org/10.1016/j.msec.2012.06.004
Publikováno v:
ECS Transactions
We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with Silicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14725efc5e27ccb6fd7e0c8e2ed038e9
https://doi.org/10.1149/1.2986841
https://doi.org/10.1149/1.2986841