Zobrazeno 1 - 10
of 187
pro vyhledávání: '"A K, Markov"'
Publikováno v:
Сучасні медичні технології, Iss 1(48), Pp 67-69 (2021)
The disadvantages and traumatic injury of using traditional traumatological instrumentation for open reduction of metacarpal fractures prompted the development of a modified bone holder. The clinical experience of using the developed instrument is pr
Externí odkaz:
https://doaj.org/article/057d2b9a677147cb91499b33d6f121c8
Publikováno v:
Physical Education of Students, Vol 23, Iss 4, Pp 191-197 (2018)
Purpose : Experts record the deterioration of the physical and cardiorespiratory fitness of students. Scientists recommend using fitness training in the practice of teaching students to increase cardiorespiratory fitness. The purpose of the research
Externí odkaz:
https://doaj.org/article/f01d5440c7a4461c816b0ac2e7ac91ee
Autor:
Sviatets, Sergey A. Kukushkin, Lev K. Markov, Alexey S. Pavlyuchenko, Irina P. Smirnova, Andrey V. Osipov, Alexander S. Grashchenko, Andrey E. Nikolaev, Alexey V. Sakharov, Andrey F. Tsatsulnikov, Genadii V.
Publikováno v:
Coatings; Volume 13; Issue 7; Pages: 1142
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (M
Autor:
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavlyuchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Technical Physics Letters. 48:31-34
Publikováno v:
Semiconductors. 56:85-90
Publikováno v:
Semiconductors. 55:438-445
Publikováno v:
Semiconductors. 54:1310-1314
A relief on the surface of GaN previously released from the growth substrate is formed by a combined method in which reactive ion etching is used in combination with liquid etching (in KOH or hydrochloric-acid solutions). The dependence of obtained r
Publikováno v:
Semiconductors. 54:672-676
The kind of profile produced during the reactive ion etching of AlGaInN light-emitting-diode (LED) heterostructures on the surface that became free after removal of the growth substrate is studied in relation to the composition of the gas mixture use
Publikováno v:
Economy, labor, management in agriculture. :63-66
Autor:
A. S. Pavlyuchenko, O. V. Osipov, I. P. Smirnova, G. V. Itkinson, M. V. Kukushkin, L. K. Markov
Publikováno v:
Semiconductors. 53:1529-1534
A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25