Zobrazeno 1 - 10
of 2 961
pro vyhledávání: '"A J E Rowe"'
Publikováno v:
The British Medical Journal, 1975 Sep . 3(5984), 659-659.
Externí odkaz:
https://www.jstor.org/stable/20406850
Publikováno v:
Computers and Electronics in Agriculture. 140:317-326
We propose the use of temperature-stabilized lasers to improve the accuracy of a spectral-reflectance-based plant discrimination sensor for use in selective herbicide spraying systems. The discrimination of Canola from Wild-radish is based on Normali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c18a214630df3ccee97ae764ad328d
https://doi.org/10.1016/j.compag.2017.06.017
https://doi.org/10.1016/j.compag.2017.06.017
Autor:
Tianshuai Guan, J. E. Rowe, Harald Ade, Sean Stuart, Daniel B. Dougherty, Eliot Gann, Terry McAfee
Publikováno v:
Crystal Growth & Design. 14:4394-4401
Graphene has long been recognized as a potential replacement for indium tin oxide as a transparent conducting substrate that may not only be cheaper to manufacture but also may provide mechanical flexibility and templating for preferential organic fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a355b54b15896b505fad1510a8db65
https://doi.org/10.1021/cg500504u
https://doi.org/10.1021/cg500504u
Autor:
Anthony J. Caprio, J. E. Rowe
Publikováno v:
North Carolina Medical Journal. 74:201-204
This issue of the NCMJ addresses the problem of chronic pain in North Carolina; its diagnosis and management in primary and specialty care; and the need to balance efficacy and safety when prescribing opioid medications, as these drugs are associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3688ad34652afb9fde2fbd0a8df5198a
https://doi.org/10.18043/ncm.74.3.201
https://doi.org/10.18043/ncm.74.3.201
Publikováno v:
Surface Science. 611:25-31
We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d165dc220f5e2b3e9440266b490c1b
https://doi.org/10.1016/j.susc.2013.01.010
https://doi.org/10.1016/j.susc.2013.01.010
Publikováno v:
Journal of Lightwave Technology. 31:822-829
We present a novel design for an optoelectronics- based real-time plant discrimination sensor, which enables a high signal-to-noise ratio, and hence a low false positive rate, to be attained. The sensor employs graded thin film coatings and a high-sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::874f5e7c3fdf6390c8c034ee9ebe3ec8
https://doi.org/10.1109/jlt.2013.2237883
https://doi.org/10.1109/jlt.2013.2237883
Autor:
Ji Ung Lee, J. E. Rowe, Everett Comfort, Florence Nelson, Alain C. Diebold, Andreas Sandin, Dhiraj Prasad Sinha, Daniel B. Dougherty
Publikováno v:
ECS Transactions. 45:63-71
Graphene's importance in post-CMOS device research drives the need for a variety of metrology methods for film characterization. Chemical Vapor Deposition (CVD) on metallic foils and the thermal decomposition of SiC have become two of the dominant fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14678f10b7f95e192f73e70a1e7c8c18
https://doi.org/10.1149/1.3700453
https://doi.org/10.1149/1.3700453
Autor:
da Silva Santos, Mayara1,2 (AUTHOR) mayara.da_silva_santos@helmholtz-berlin.de, Medel, Robert3 (AUTHOR), Kruse, Simon2,4 (AUTHOR), Flach, Max1,2 (AUTHOR), Ablyasova, Olesya S.1,2 (AUTHOR), Timm, Martin2 (AUTHOR), von Issendorff, Bernd1 (AUTHOR), Hirsch, Konstantin2 (AUTHOR), Zamudio‐Bayer, Vicente2 (AUTHOR), Riedel, Sebastian3 (AUTHOR) s.riedel@fu-berlin.de, Lau, J. Tobias1,2 (AUTHOR) tobias.lau@helmholtz-berlin.de
Publikováno v:
Chemistry - Methods. Dec2024, Vol. 4 Issue 12, p1-8. 8p.
Autor:
Patrick S. Lysaght, Hyungtak Seo, Jan Lüning, Gerald Lucovsky, S. Lee, J. E. Rowe, M. D. Ulrich, L. B. Fleming, Gennadi Bersuker
Publikováno v:
Journal of Materials Science: Materials in Electronics. 18:263-266
Dielectrics comprised of nano-crystalline HfO2 in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90057d9107fc1e45c51f9221daa07ffa
https://doi.org/10.1007/s10854-007-9192-x
https://doi.org/10.1007/s10854-007-9192-x
Autor:
J. E. Rowe
Publikováno v:
Manuel Cardona ISBN: 9783319203423
I first met Manuel in September, 1965, at a faculty-student social event hosted for Brown Physics entering graduate students. I had just traveled from South Georgia with my new wife, Susie; we had a few disappointments with our new apartment in Provi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b97b730eb917331ba8cafd5f85f0fb8
https://doi.org/10.1007/978-3-319-20343-0_34
https://doi.org/10.1007/978-3-319-20343-0_34
