Zobrazeno 1 - 10
of 114
pro vyhledávání: '"A I, Zebrev"'
Proton- and Neutron-Induced SEU Cross-Section Modeling and Simulation: A Unified Analytical Approach
Autor:
Gennady I. Zebrev, Nikolay N. Samotaev, Rustem G. Useinov, Artur M. Galimov, Vladimir V. Emeliyanov, Artyom A. Sharapov, Dmitri A. Kazyakin, Alexander S. Rodin
Publikováno v:
Radiation, Vol 4, Iss 1, Pp 37-49 (2024)
A new physics-based compact model, which makes it possible to simulate in a unified way the neutrons and protons of cosmic ray-induced SEU cross-sections, including the effects from nuclear reaction products and from direct ionization by low-energy p
Externí odkaz:
https://doaj.org/article/9d0bfed7d313493dbcb23cb4dbe73ed5
Autor:
G. I. Zebrev, D. S. Malich
Publikováno v:
IEEE Transactions on Electron Devices. 70:1574-1579
Autor:
A. V. Tikhomirova, D. V. Goryachev, V. A. Merkulov, I. V. Lysikova, A. I. Gubenko, A. I. Zebrev, А. P. Solovieva, D. P. Romodanovsky, E. V. Melnikova
Publikováno v:
Ведомости Научного центра экспертизы средств медицинского применения, Vol 8, Iss 1, Pp 23-35 (2018)
The article reviews literature data on development and clinical use of biomedical cell products (BCPs) — a new class of medicines which could be approved for distribution and use only after their specific activity and safety have been thoroughly ex
Externí odkaz:
https://doaj.org/article/f9be873918494bd6960fb4e34152ae0c
Autor:
Valentin O. Turin, Roman S. Shkarlat, Vyacheslav N. Poyarkov, Oleg N. Kshensky, Zebrev I. Zebrev, Benjamín Iniguez, Michael S. Shur
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures
Autor:
Elizaveta V. Mrozovskaya, Pavel A. Chubunov, P. A. Zimin, Vasily S. Anashin, Gennady I. Zebrev
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 940:307-312
This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the t
Autor:
Gennady I. Zebrev
Publikováno v:
IEEE Transactions on Electron Devices. 66:2483-2488
The inter-device mismatch and intra-device temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability con-cerned with stochastic oxide charge trapping and de-trapping.
Autor:
Vladimir M. Maslovsky, P. A. Zimin, Pavel A. Chubunov, Gennady I. Zebrev, Elizaveta V. Mrozovskaya
Publikováno v:
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 23:313-318
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 913:65-71
A simple and self-consistent approach has been proposed for simulation of the proton-induced soft error rate based on the heavy ion induced single event upset cross-section data and vice versa. The approach relies on the GEANT4 assisted Monte Carlo s