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pro vyhledávání: '"A I, Hema"'
Publikováno v:
International Journal of Electrical and Electronics Research. 10:806-810
High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) technology is unique to the prominent devices in low power applications. To minimize leakage
Autor:
D Vaishali Naidu, Tarasingh Patloth, K Suhasini, J Sharada Reddy, Hasanuddin Shaik, I Hema Chandrika
Publikováno v:
International Journal of Clinical Pediatric Dentistry
Aim and objective To compare and evaluate the efficacy of three different pediatric rotary file systems in primary molars using cone-beam computed tomography (CBCT). Materials and methods Thirty extracted mandibular primary molars were selected and d
Publikováno v:
Likars'ka sprava. (1-2)
74 patients with different variants of coronary syndrome have been observed at myocardial infarction department of #5 Kiev sity clinical hospital. Investigations showed that 66 (89%) patients from 74 had their symmetry dynamics of T wave in phase spa