Zobrazeno 1 - 10
of 19
pro vyhledávání: '"A H Feghhi"'
Publikováno v:
Iranian Journal of Physics Research, Vol 17, Iss 2, Pp 233-239 (2017)
In this paper, we introduce RF electron gun of Iranian Light Source Facility (ILSF) pre-injection system. Design, fabrication and low-power microwave tests results of the prototype RF electron gun have been described in detail. This paper also explai
Externí odkaz:
https://doaj.org/article/05aec182fa97462c9b95c8154fc0a5bc
Publikováno v:
Iranian Journal of Physics Research, Vol 15, Iss 2, Pp 253-258 (2015)
Up to now, different designs have been introduced for measurement beam profile accelerators. Secondary electron emission monitors (SEM) are one of these devices which have been used for this purpose. In this work, a SEM has been constructed to measur
Externí odkaz:
https://doaj.org/article/78862f6361fa4c3d805262ee1d8b6cb4
Publikováno v:
فصلنامه علوم و فناوری فضایی, Vol 6, Iss 4, Pp 23-28 (2014)
Shape and size of sensitive volume are the most important parameters to model electronic devices for calculation of the SEU rate from space radiations. So far different models have been proposed for estimation of the sensitive volume. In this work, r
Externí odkaz:
https://doaj.org/article/a876bb97d10742dd93389fc7f52e4e8e
Publikováno v:
فصلنامه علوم و فناوری فضایی, Vol 6, Iss 3, Pp 55-60 (2013)
Space radiation environment has concerned about proper performance of electronic systems and equipment used in the space due to a variety of space radiations. The radiation hardening techniques are required to all parts of the system in such environm
Externí odkaz:
https://doaj.org/article/84f5ceb8539947b981e4ba13ff9685e5
Autor:
A, Bafekry, M, Faraji, M M, Fadlallah, D M, Hoat, H R, Jappor, I Abdolhosseini, Sarsari, M, Ghergherehchi, S A H, Feghhi
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(45)
Recent developments in the synthesis of highly crystalline ultrathin BiTeX (X = Br, Cl) structures [Debarati Hajra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e0a64855abc9d8c76c67c7e002e97178
https://pubmed.ncbi.nlm.nih.gov/34766178
https://pubmed.ncbi.nlm.nih.gov/34766178
Autor:
A, Bafekry, S, Karbasizadeh, C, Stampfl, M, Faraji, D M, Hoat, I Abdolhosseini, Sarsari, S A H, Feghhi, M, Ghergherehchi
Publikováno v:
Physical chemistry chemical physics : PCCP. 23(28)
Motivated by the recent successful synthesis of highly crystalline ultrathin BiTeCl and BiTeBr layered sheets [Debarati Hajra et al., ACS Nano, 2020, 14, 15626], herein for the first time, we carry out a comprehensive study on the structural and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5000763eeff54cbaec5c3b645117413b
https://pubmed.ncbi.nlm.nih.gov/34235514
https://pubmed.ncbi.nlm.nih.gov/34235514
Autor:
A, Bafekry, M, Shahrokhi, A, Shafique, H R, Jappor, F, Shojaei, S A H, Feghhi, M, Ghergherehchi, D, Gogova
Publikováno v:
Nanotechnology. 32(21)
In this study, the structural, electronic and optical properties of theoretically predicted C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::86fb61ec33561345f061b6e18625e6d4
https://pubmed.ncbi.nlm.nih.gov/33339018
https://pubmed.ncbi.nlm.nih.gov/33339018
Publikováno v:
Radiation and Environmental Biophysics. 58:119-128
Radiological dose assessment is one of the main categories of safety assessment for nuclear reactors and facilities. The radiation risks to the public and to the environment that may arise from these facilities have to be assessed and, if necessary,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2dc0661d7bb8aa0590f527be61fc4542
https://doi.org/10.1007/s00411-018-0761-6
https://doi.org/10.1007/s00411-018-0761-6
Publikováno v:
Instruments and Experimental Techniques. 60:752-758
Gas–liquid two phase f low is probably the most important form of multiphase f lows and is found widely in industrial applications, particularly in the oil and petrochemical industry. In this study, in the first instance a gas–liquid two phase f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64dfde766baad29b743b4b03c2ee76eb
https://doi.org/10.1134/s0020441217050049
https://doi.org/10.1134/s0020441217050049
The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b9b2451011a1b114aaa2e8c960983a7
