Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A Gawase"'
Autor:
Yokoyama, M., Amitsuka, H., Matsuda, K., Gawase, A., Oyama, N., Kawasaki, I., Tenya, K., Yoshizawa, H.
Publikováno v:
J. Phys. Soc. Jpn. 75, 103703 (2006)
We performed elastic neutron scattering experiments on solid solution CeRh1-xCoxIn5 with x=0.4 to clarify the nature of the antiferromagnetic (AF) phase in the vicinity of the quantum critical point. We observed the incommensurate AF order below T_Nh
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610059
Autor:
Shuichi Saito, Y. Kawashima, S. Chikaki, R. Hayashi, N. Oda, T. Suzuki, T. Kubota, N. Nakamura, K. Tomioka, A Gawase, S. Nakao, E. Soda, J. Nogawa
Publikováno v:
IEEE Transactions on Electron Devices. 57:2821-2830
The total performance of low-k/Cu interconnects featuring short turnaround-time (TAT) silylated scalable porous silica (Po-SiO, k = 2.1) with high porosity (50%) is demonstrated. The TAT for the film formation process including silylation treatment i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5623a3e14177c02de365bf919da7d50
https://doi.org/10.1109/ted.2010.2066568
https://doi.org/10.1109/ted.2010.2066568
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 378:80-81
Autor:
M. Shiohara, I. Mori, Shuichi Saito, S. Chikaki, N. Oda, N. Tarumi, E. Soda, N. Hosoi, H. Aoyama, N. Nakamura, Y. Tanaka, A Gawase, D. Kawamura, Seiichi Kondo
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
A feasibility study of 70 nm pitch 2-level dual damascene interconnects featuring EUV lithography is presented. Using Ru barrier metal and scalable porous silica (Po-SiO, k=2.1), a low resistivity below 4.5 µΩcm and a 13 % reduction in wiring capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0157fcf669cbfca8947c7b00f36624e5
https://doi.org/10.1109/iedm.2009.5424271
https://doi.org/10.1109/iedm.2009.5424271
Publikováno v:
2009 IEEE International Interconnect Technology Conference.
To enhance the process damage tolerance, a 2nd generation scalable porous silica (k=2.1) has been developed by reducing pore-size to 2/3. Using this new low-k film, hybrid dual-damascene interconnects were successfully fabricated with low thermal str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1db3cf4a18dbd69b9db0a5dfee44f2e
https://doi.org/10.1109/iitc.2009.5090355
https://doi.org/10.1109/iitc.2009.5090355
Autor:
Akifumi Gawase, Hideyuki Tomizawa, Takamasa Usui, Tadayoshi Watanabe, Yumi Hayashi, Kei Watanabe, Hideki Shibata, Miyoko Shimada
Publikováno v:
2008 International Interconnect Technology Conference.
Porous Low-k dielectric (k=2.0) was applied for Copper (Cu) dual-damascene interconnect with SiOC/PAr hybrid dielectric. More than 90% yield for via was obtained and approximately 5% capacitance reduction in inter-layer was obtained compared with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63451338c9b3a1ef714dbeaeb3ab1692
https://doi.org/10.1109/iitc.2008.4546969
https://doi.org/10.1109/iitc.2008.4546969
Autor:
Kei Watanabe, H. Naruse, Tatsuya Usami, Hideaki Masuda, T. Kameshima, Y. Enomoto, A. Gawase, M. Tagami, Hideshi Miyajima, C. Maruyama, Miyoko Shimada, M. Sekine, T. Kitano, Naofumi Nakamura, Y. Kagawa
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
Adhesion tests for a real Cu/low-k patterned structure were studied for 45-nm node devices. Results from 4 point-bending (4PB) and modified edge lift-off tests (m-ELT) were compared. Cu dual damascene interconnects structures with stacked hybrid low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fedfff23147a5207cf0f46dfc64f6536
https://doi.org/10.1109/iitc.2007.382358
https://doi.org/10.1109/iitc.2007.382358
Autor:
T. Watanabe, H. Nasu, T. Usui, G. Minamihaba, N. Kurashima, A. Gawase, M. Shimada, Y. Yoshimizu, Y. Uozumi, H. Shibata
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
Self-formed barrier technology using copper (Cu) manganese (Mn) alloy seed was applied for Cu dual-damascene interconnect with porous-SiOC/porous-PAr (k=2.3) hybrid dielectric for the first time. More than 90% yield for wiring and via-chain was obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2986ab43d3377475e4890f02ae6568af
https://doi.org/10.1109/iitc.2007.382332
https://doi.org/10.1109/iitc.2007.382332
Autor:
Ikuto Kawasaki, Hideki Yoshizawa, Akifumi Gawase, Kenichi Tenya, Hiroshi Amitsuka, M. Yokoyama, N. Oyama, K. Matsuda
We performed elastic neutron scattering experiments on solid solution CeRh1-xCoxIn5 with x=0.4 to clarify the nature of the antiferromagnetic (AF) phase in the vicinity of the quantum critical point. We observed the incommensurate AF order below T_Nh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0d5248a5f3091afcb5035ee78433f71
http://arxiv.org/abs/cond-mat/0610059
http://arxiv.org/abs/cond-mat/0610059
Publikováno v:
Physica B: Condensed Matter. :80-81
We have performed the elastic neutron scattering measurements under the uniaxial stress σ for the antiferromagnetic (AF) state in CePd 2 Si 2 , and found an anisotropy in the σ dependence of the AF state. The magnitude of the staggered moment is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bf2818fdae33c9ddb2aa1908a97881b
https://doi.org/10.1016/j.physb.2006.01.032
https://doi.org/10.1016/j.physb.2006.01.032