Zobrazeno 1 - 10
of 12 363
pro vyhledávání: '"A Gali"'
Autor:
Steidl, Timo, Kuna, Pierre, Hesselmeier-Hüttmann, Erik, Liu, Di, Stöhr, Rainer, Knolle, Wolfgang, Ghezellou, Misagh, Ul-Hassan, Jawad, Schober, Maximilian, Bockstedte, Michel, Gali, Adam, Vorobyov, Vadim, Wrachtrup, Jörg
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor i
Externí odkaz:
http://arxiv.org/abs/2410.09021
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength emission. Nonet
Externí odkaz:
http://arxiv.org/abs/2409.10233
Autor:
Salomon, Andreas, Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Gali, Ádám, Fromherz, Thomas, Brehm, Moritz
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive method to
Externí odkaz:
http://arxiv.org/abs/2408.13660
Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid state platform with a great pot
Externí odkaz:
http://arxiv.org/abs/2408.13515
In recent years, the negatively charged group-IV--vacancy defects in diamond, labeled as G4V($-$) or G4V centers, have received a great attention in quantum information processing. In this study, we investigate the magneto-optical properties of the G
Externí odkaz:
http://arxiv.org/abs/2408.10407
Autor:
Bulancea-Lindvall, Oscar, Davidsson, Joel, Ivanov, Ivan G., Gali, Adam, Ivády, Viktor, Armiento, Rickard, Abrikosov, Igor A.
Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-b
Externí odkaz:
http://arxiv.org/abs/2408.06823
We investigate the effect of a waveguide on an emitter spontaneous emission in its vicinity. The impact of various possible orientations of an emitter with respect to the waveguide surface is studied through simulations and compared with experimental
Externí odkaz:
http://arxiv.org/abs/2407.06592
Autor:
Kollarics, Sándor, Márkus, Bence Gábor, Kucsera, Robin, Thiering, Gergő, Gali, Ádám, Németh, Gergely, Kamarás, Katalin, Forró, László, Simon, Ferenc
Publikováno v:
Sci. Adv.10, eadn0616 (2024)
Coherent light sources emitting in the terahertz range are highly sought after for fundamental research and applications. THz lasers rely on achieving population inversion. We demonstrate the generation of THz radiation using nitrogen-vacancy (NV) ce
Externí odkaz:
http://arxiv.org/abs/2406.16616
Autor:
Silkinis, Rokas, Žalandauskas, Vytautas, Thiering, Gergő, Gali, Adam, Van de Walle, Chris G., Alkauskas, Audrius, Razinkovas, Lukas
We apply density functional theory to investigate interactions between electronic and vibrational states in crystal defects with multi-mode dynamical Jahn-Teller (JT) systems. Our focus is on transitions between orbital singlet and degenerate orbital
Externí odkaz:
http://arxiv.org/abs/2406.10647
Autor:
Plo, J., Pershin, A., Li, S., Poirier, T., Janzen, E., Schutte, H., Tian, M., Wynn, M., Bernard, S., Rousseau, A., Ibanez, A., Valvin, P., Desrat, W., Michel, T., Jacques, V., Gil, B., Kaminska, A., Wan, N., Edgar, J. H., Gali, A., Cassabois, G.
Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the b
Externí odkaz:
http://arxiv.org/abs/2405.20837