Zobrazeno 1 - 10
of 27
pro vyhledávání: '"A G Holmes-Siedle"'
Autor:
A. G. Holmes-Siedle, B. Camanzi
Publikováno v:
Nature Materials. 7:343-345
New dosimeters are needed to measure radiation up to extreme levels created by particle accelerators and nuclear fusion reactors. The time to develop these dosimeters is now.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8916546eee2aafd380732cd716f78732
https://doi.org/10.1038/nmat2159
https://doi.org/10.1038/nmat2159
Publikováno v:
2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0782be645d677713db954568e288ccca
https://doi.org/10.1109/radecs.2013.6937363
https://doi.org/10.1109/radecs.2013.6937363
Autor:
J. O. Goldsten, R. H. Maurer, P. N. Peplowski, A. G. Holmes-Siedle, C. C. Herrmann, B. H. Mauk
Publikováno v:
The Van Allen Probes Mission ISBN: 9781489974327
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d29dee847c7271fe4550d112feac30d5
https://doi.org/10.1007/978-1-4899-7433-4_14
https://doi.org/10.1007/978-1-4899-7433-4_14
Publikováno v:
2009 European Conference on Radiation and Its Effects on Components and Systems.
The construct and modeled performance of a bi-layer cantilever beam type device which can serve as a dosimeter for very high neutron fluence environments such as nuclear or fusion applications is described. A layer of material such as molybdenum is f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::578f36cc25b9d353e7baea127a8661b4
https://doi.org/10.1109/radecs.2009.5994555
https://doi.org/10.1109/radecs.2009.5994555
Publikováno v:
IEEE Transactions on Nuclear Science. 31:1106-1112
Degradation of neutron-sensitive devices for fusion diagnostics is calculated as a function of location in ducts through bulk shields. It is shown that single-crystal semiconductor devices, such as n/p silicon diodes, will undergo severe degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2ebbb91f1e1e13158453283bdce2a6b
https://doi.org/10.1109/tns.1984.4333464
https://doi.org/10.1109/tns.1984.4333464
Publikováno v:
IEEE Transactions on Nuclear Science. 33:1310-1315
When a metal-oxide-semiconductor (MOS) device is irradiated, charge builds up in the oxide and new interface states are also created. The effect has been shown to constitute a useful dosimetric principle. The trapped charges may relax in various ways
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eff8ae743a3630c8a35cc43394d41bd9
https://doi.org/10.1109/tns.1986.4334598
https://doi.org/10.1109/tns.1986.4334598
Publikováno v:
IEEE Transactions on Nuclear Science. 21:159-166
Electrical measurements are described of grown silicon dioxide thin films irradiated by gamma rays, X-rays and broadband VUV light. The dependence of radiation-sensitivity on processing variations, including annealing temperature, is compared for uni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::492facbdbcca947d3df88ba7276e0364
https://doi.org/10.1109/tns.1974.6498922
https://doi.org/10.1109/tns.1974.6498922
Autor:
A G Holmes-Siedle
Publikováno v:
Reports on Progress in Physics. 37:699-769
Amorphous forms of semiconductors and insulators are increasingly used in various electronic devices and in other technologically advanced materials such as laser hosts and light guides. These devices will sometimes be required to retain their perfor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc46a80f09c2bc0fe016d41b2c90f8cb
https://doi.org/10.1088/0034-4885/37/6/001
https://doi.org/10.1088/0034-4885/37/6/001
Publikováno v:
IEEE Transactions on Nuclear Science. 15:61-68
Room temperature recovery kinetics of lithium-containing p/n silicon diodes and solar-cells were experimentally investigated after irradiation by 1 MeV electrons to fluences of 1013 and 1014 e/cm2. The current physical model for the recovery process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02bf6342a985c5d2d6f2621891e3d79e
https://doi.org/10.1109/tns.1968.4325032
https://doi.org/10.1109/tns.1968.4325032
Autor:
A. G. Holmes-Siedle, Karl H. Zaininger
Publikováno v:
IEEE Transactions on Reliability. :34-44
Unlike the solar cell and the NPN transistor, the MOS device does not sustain a degradation as the principal effect of exposure to nuclear radiation. Instead, the MOS device undergoes a change of operating region, the change being in the nature of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46b9448cc5d77ef9a85a80fc46cbd72
https://doi.org/10.1109/tr.1968.5217504
https://doi.org/10.1109/tr.1968.5217504