Zobrazeno 1 - 10
of 145
pro vyhledávání: '"A G Gladyshev"'
Autor:
Vladislav V. Andryushkin, Anna S. Dragunova, Sergey D. Komarov, Alexey M. Nadtochiy, Andrey G. Gladyshev, Andrey V. Babichev, Alexander V. Uvarov, Innokenty I. Novikov, Evgenii S. Kolodeznyi, Leonid Ya. Karachinsky, Natalia V. Kryzhanovskaya, Vladimir N. Nevedomskii, Anton Yu. Egorov, Vladislav E. Bougrov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 22, Iss 5, Pp 921-928 (2022)
The results of the study of the optical properties of low-density InGaPAs quantum dots, as well as the effect of low temperatures and thermal annealing parameters on their optical and structural properties were presented. InGaPAs quantum dots were fo
Externí odkaz:
https://doaj.org/article/767f65f8e2974eb19d57bbb18aeb31cf
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0172fb08c0b551ee80b6af5d48d4ea
https://doi.org/10.1109/jqe.2022.3141418
https://doi.org/10.1109/jqe.2022.3141418
Autor:
Andrey V. Babichev, Sergey D. Komarov, Julia S. Tkach, Natalia V. Kryzhanovskaya, Alexey M. Nadtochiy, Alexey A. Blokhin, Sergei A. Blokhin, Vladimir N. Nevedomskiy, Nikolay A. Maleev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov
Publikováno v:
2022 International Conference on Electrical Engineering and Photonics (EExPolytech).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f045eb1edf50197278076a1407ce8f
https://doi.org/10.1109/eexpolytech56308.2022.9951000
https://doi.org/10.1109/eexpolytech56308.2022.9951000
Autor:
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 55:591-594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2eb138cf98cc29dc9b9455b75fea84
https://doi.org/10.1134/s106378262107006x
https://doi.org/10.1134/s106378262107006x
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Victor M. Ustinov, Vladislav E. Bougrov, Anton Yu. Egorov, Leonid Ya. Karachinsky
Publikováno v:
Optical Engineering. 61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87bd2f091665d4c637e407f770dedbe7
https://doi.org/10.1117/1.oe.61.9.096109
https://doi.org/10.1117/1.oe.61.9.096109
Autor:
A. V. Babichev, N. V. Kryzhanovskaya, D. V. Denisov, A. G. Gladyshev, E. S. Kolodeznyi, Alexey M. Nadtochiy, A. Yu. Egorov, Innokenty I. Novikov, Anna S. Dragunova, L. Ya. Karachinsky, A. V. Uvarov, S. D. Komarov, V. V. Andryushkin
Publikováno v:
Optics and Spectroscopy. 129:256-260
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c457ee67df56bdcce7d7b8a967fff8f4
https://doi.org/10.1134/s0030400x21020089
https://doi.org/10.1134/s0030400x21020089
Autor:
V. V. Dudelev, E. D. Cherotchenko, D. A. Mikhailov, G. Savchenko, S. Losev, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, L. Ya. Karachinsky, A.Yu. Egorov, G. S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244de746caac7b5bf06fdf501cd88eb5
https://doi.org/10.1109/iclo54117.2022.9840330
https://doi.org/10.1109/iclo54117.2022.9840330
Autor:
Innokenty I. Novikov, V. N. Nevedomskii, E. S. Kolodeznyi, V. V. Andryushkin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, A. Yu. Egorov
Publikováno v:
Technical Physics. 65:2047-2050
A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the repl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::080dbb5b06153b8a585ca711a7a09eba
https://doi.org/10.1134/s1063784220120099
https://doi.org/10.1134/s1063784220120099
Autor:
A. A. Blokhin, Innokenty I. Novikov, D. V. Denisov, A. V. Babichev, M. A. Bobrov, Nikolai A. Maleev, S. S. Rochas, S. A. Blokhin, A. G. Kuzmenkov, L. Ya. Karachinsky, A. P. Vasil’ev, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, A. S. Ionov, A. G. Gladyshev
Publikováno v:
Technical Physics Letters. 46:1257-1262
An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62c9ad38d363aff5e9005d2930f6cf0
https://doi.org/10.1134/s1063785020120172
https://doi.org/10.1134/s1063785020120172
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, D. I. Kuritsyn, E. S. Kolodeznyi, D. V. Denisov, G. V. Voznyuk, A. G. Gladyshev, A. V. Lyutetskii, Nikita A. Pikhtin, Anton Yu. Egorov, L. Ya. Karachinsky, A. V. Babichev, Sergey O. Slipchenko, Innokenty I. Novikov, S. V. Morozov
Publikováno v:
Semiconductors. 54:1816-1819
We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of the waveguide. The active area of the quantum-cascade laser heterostructure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4dedfae79a45bf91e3eb1873bb8a5c
https://doi.org/10.1134/s106378262014002x
https://doi.org/10.1134/s106378262014002x