Zobrazeno 1 - 10
of 104
pro vyhledávání: '"A G, Sathe"'
Autor:
Abhishek G. Sathe, Richard C. Brundage, Vijay Ivaturi, James C. Cloyd, James M. Chamberlain, Jordan J. Elm, Robert Silbergleit, Jaideep Kapur, Lisa D. Coles
Publikováno v:
Clinical and Translational Science, Vol 14, Iss 4, Pp 1444-1451 (2021)
Abstract Estimating early exposure of drugs used for the treatment of emergent conditions is challenging because blood sampling to measure concentrations is difficult. The objective of this work was to evaluate predictive performance of two early con
Externí odkaz:
https://doaj.org/article/f8f4a9c3744f4a54a8df1d458a787d4f
Autor:
K. K. Singha, P. P. Singh, R. Narzary, A. Mondal, M. Gupta, V. G. Sathe, D. Kumar, S. K. Srivastava
Publikováno v:
Crystals, Vol 13, Iss 6, p 932 (2023)
Researchers have been consistently looking for new materials that can be integrated in optoelectronic and spintronic devices. In this research, we investigated the crystalline structure, Raman, and optical characteristics of Mg-doped SnO2 compounds.
Externí odkaz:
https://doaj.org/article/cc1c9a901cdc4764b9864d6f8e9a3bd4
Autor:
Rohit Sharma, Anit Dawar, Sunil Ojha, Radhapiyari Laishram, V. G. Sathe, Ritu Srivastava, Om Prakash Sinha
Publikováno v:
Journal of Electronic Materials. 52:2819-2830
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bb1b8ec60b81ae50e84fb139709f0ae
https://doi.org/10.1007/s11664-023-10245-9
https://doi.org/10.1007/s11664-023-10245-9
Autor:
Rohit Sharma, Ashish Kumar, Anit Dawar, Sunil Ojha, Ambuj Mishra, Anshu Goyal, Radhapiyari Laishram, V. G. Sathe, Ritu Srivastava, Om Prakash Sinha
Publikováno v:
Transactions on Electrical and Electronic Materials. 24:140-148
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1cad279039452dfda3f927f8c49fb7
https://doi.org/10.1007/s42341-023-00429-9
https://doi.org/10.1007/s42341-023-00429-9
Autor:
Srivastava, K. K. Singha, P. P. Singh, R. Narzary, A. Mondal, M. Gupta, V. G. Sathe, D. Kumar, S. K.
Publikováno v:
Crystals; Volume 13; Issue 6; Pages: 932
Researchers have been consistently looking for new materials that can be integrated in optoelectronic and spintronic devices. In this research, we investigated the crystalline structure, Raman, and optical characteristics of Mg-doped SnO2 compounds.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::70ba80b568e0145a2a5627eb9ca5c50b
Autor:
Arkadeb Pal, T. W. Yen, T. W. Kuo, C. W. Wang, S. M. Huang, M. C. Chou, Y. C. Lai, Y. C. Chuang, P. Yanda, A. Sundaresan, H. S. Kunwar, V. G. Sathe, Ajay Tiwari, D. Chandrasekhar Kakarla, H. D. Yang
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43328f054bc0b86da5c914490cd14d5d
https://doi.org/10.1103/physrevb.107.184430
https://doi.org/10.1103/physrevb.107.184430
Autor:
Hiteshkumar R. Bhoi, M. P. Deshpande, Sandip V. Bhatt, Piyush Rajput, Shivam Patel, Yash V. Joshi, Zubin R. Parekh, Nidhishree M. Suchak, V. G. Sathe, S. H. Chaki
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13a8a22ae91d087687b9ad01fa162a1c
https://doi.org/10.1007/s10854-023-10631-3
https://doi.org/10.1007/s10854-023-10631-3
Autor:
Xiao-Hong Zhu, Byeong-Yeul Lee, Paul Tuite, Lisa Coles, Abhishek G. Sathe, Chi Chen, Jim Cloyd, Walter C. Low, Clifford J. Steer, Wei Chen
Publikováno v:
Metabolites, Vol 11, Iss 3, p 145 (2021)
Abnormal energy metabolism associated with mitochondrial dysfunction is thought to be a major contributor to the progression of neurodegenerative diseases such as Parkinson’s disease (PD). Recent advancements in the field of magnetic resonance (MR)
Externí odkaz:
https://doaj.org/article/8c4df6fa57164bb9be5ad71d5f6b05b0
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:23964-23973
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162308c5b58af9ad200ef597bb7cad0c
https://doi.org/10.1007/s10854-022-08074-3
https://doi.org/10.1007/s10854-022-08074-3
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:4072-4080
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd6794a0b047bc790a40d234b6aae6a
https://doi.org/10.1007/s10854-021-07600-z
https://doi.org/10.1007/s10854-021-07600-z