Zobrazeno 1 - 10
of 11
pro vyhledávání: '"A D Kantz"'
Autor:
Igor Segota, Jeramie D Watrous, Edward D Kantz, Shriram Nallamshetty, Saumya Tiwari, Susan Cheng, Mohit Jain, Tao Long
Publikováno v:
Nucleic Acids Research. 51:4178-4190
The human gut microbiome has been linked to health and disease. Investigation of the human microbiome has largely employed 16S amplicon sequencing, with limited ability to distinguish microbes at the species level. Herein, we describe the development
Publikováno v:
Anal Chem
Liquid chromatography-mass spectrometry (LC-MS)-based metabolomics has emerged as a valuable tool for biological discovery, capable of assaying thousands of diverse chemical entities in a single biospecimen. Processing of non-targeted LC-MS spectral
Publikováno v:
Transactions of the ASAE. 35:523-533
An automatic apparatus for measuring single-radius sprinkler water distribution patterns was designed and constructed. Any number of consecutive trials with different operating pressures and riser tilts could be conducted automatically. Water heights
Publikováno v:
IEEE Journal of Solid-State Circuits. 13:319-325
The growing packing density of integrated circuits calls, to an increasing extent, for the testing of the functioning of the individual circuits of ICs. If a mechanical prober is used for this purpose, the resulting capacitive loading of the circuit
Autor:
A. D. Kantz
Publikováno v:
Journal of Applied Physics. 34:1944-1952
The average energy of the neutron spectrum for reactor sources may be evaluated to good approximation by a threshold‐reaction technique using the activation of only two threshold‐reaction foils. For plutonium (effective threshold 0.001 MeV) and s
Publikováno v:
Journal of Applied Physics. 33:3108-3118
Well‐defined hump structure is produced in the excess current region of Si, Ge, and GaAs Esaki diodes by irradiation with two MeV electrons, when the I‐V characteristic is observed at low temperature. Si diodes develop humps at 0.35, 0.63, and 0.
Autor:
C. B. Pierce, A. D. Kantz
Publikováno v:
Journal of Applied Physics. 34:1496-1503
Ge and Si Esaki diodes have been subjected to reactor neutron irradiation at 90°K. Ge diodes show no structure in the radiation‐induced excess current during irradiation but develop a hump at 0.30‐V bias upon anneal to above 250°K, when observe
Publikováno v:
1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A 256K DRAM with a die size of 45 mm/SUP 2/ has been developed using NMOS technology and TaSi/SUB 2/ on gate electrodes, interconnections, and nonfolded bit lines. The 90-/spl mu/m/SUP 2/ cell uses HiC implants to gain a storage capacitance of 55 fF
Publikováno v:
Radiation research. 56(1)