Zobrazeno 1 - 10
of 103
pro vyhledávání: '"A D Hirschman"'
Publikováno v:
ECS Transactions. 98:131-139
Flash lamp annealing (FLA) has been explored as an alternative to excimer laser annealed low-temperature polycrystalline silicon (LTPS) for display applications and has shown potential to streamline and decrease the cost of fabrication while maintain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a4d028bbc4ea33eeec221bea8a89145
https://doi.org/10.1149/09807.0131ecst
https://doi.org/10.1149/09807.0131ecst
Publikováno v:
ECS Meeting Abstracts. :1282-1282
The invention of portable electronic devices had a huge impact on the growing interest in flat panel displays. Since the first report in 2004 on amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors (TFTs), many companies have become int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00f335741d7adb5a04a1fc8147f04926
https://doi.org/10.1149/ma2022-02351282mtgabs
https://doi.org/10.1149/ma2022-02351282mtgabs
Publikováno v:
ECS Meeting Abstracts. :1260-1260
There is wide variation in the understanding of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. A new interpretation of transport behavior proposes an intrinsic channel mobility with distinctive temperature d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83693e07a8f0760c36e2e89fd25d2915
https://doi.org/10.1149/ma2022-02351260mtgabs
https://doi.org/10.1149/ma2022-02351260mtgabs
Publikováno v:
ECS Transactions. 90:79-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa52a65a857b3db1cd313ce0b5eb953
https://doi.org/10.1149/09001.0079ecst
https://doi.org/10.1149/09001.0079ecst
Autor:
Kevin S. Jones, Karl D. Hirschman, P. G. Whiting, Jayantha Senawiratne, J. Gregory Couillard, Johannes Moll, Robert George Manley, Carlo Kosik Williams
Publikováno v:
Journal of Materials Research. 34:1654-1668
A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0073dc2e0deacedf7f0b038bac2ca18b
https://doi.org/10.1557/jmr.2019.70
https://doi.org/10.1557/jmr.2019.70
Autor:
Robert George Manley, Glenn Packard, Viraj Garg, Paul Bischoff, Karl D. Hirschman, Karthik Bhadrachalam, Adam Rosenfeld
Publikováno v:
ECS Transactions. 86:57-72
The development of low-temperature polycrystalline silicon (LTPS) based on excimer laser annealing (ELA) has realized CMOS TFTs with notable electrical performance. The flat-panel display industry is searching for alternative LTPS strategies which ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::199e5c64fb807af9f9252a50ea2a6f4b
https://doi.org/10.1149/08611.0057ecst
https://doi.org/10.1149/08611.0057ecst
Autor:
Karl D. Hirschman, Jason Konowitch, Rahnuma Rifat Chowdhury, Prashant Ganesh, Julia Okvath, Robert George Manley, Muhammad Salahuddin Kabir, Harithshanmaa Sethupathi
Publikováno v:
ECS Transactions. 86:125-133
The focus of this work is on the performance degradation of thermally stressed IGZO TFTs with SiO2 for both the gate dielectric and back-channel passivation material. The TFT fabrication process included a post-passivation 400 °C O2 anneal to adjust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b77a9e4d7a7322dbd2f416e91661bad
https://doi.org/10.1149/08611.0125ecst
https://doi.org/10.1149/08611.0125ecst
Publikováno v:
ECS Transactions. 86:153-166
The existence of band-tail states (BTS) in indium-gallium-zinc oxide (IGZO) results in TFTs with electrical characteristics that are not well represented by conventional device models. Common parameters such as threshold voltage and channel mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::187865a78c8e6b8ff7c470394b0abe8d
https://doi.org/10.1149/08611.0153ecst
https://doi.org/10.1149/08611.0153ecst
Autor:
Santosh K. Kurinec, Scott Williams, Glenn Packard, Karl D. Hirschman, Alex Taylor, Carolyn Spaulding
Publikováno v:
Materials Letters. 305:130780
We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141c9da025f9a0ce960d75e3e699395a
https://doi.org/10.1016/j.matlet.2021.130780
https://doi.org/10.1016/j.matlet.2021.130780
Autor:
Jay D. Hirschman, Neil Mehta, Angela D. Liese, Sonya J. Jones, Alisha Coleman-Jensen, Xiaoguang Ma, Edward A. Frongillo, Nancy L. Fleischer, Ross A. Hammond, Craig Gundersen
Publikováno v:
Journal of Hunger & Environmental Nutrition. 13:362-384
Eliminating childhood hunger and supporting households in need of food are US policy priorities, because food insecurity in the US remains elevated postrecession. The objective of this study was to bring a systems science lens to the issue of childho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a5142d2054642e0827294b7c1088bfd
https://doi.org/10.1080/19320248.2017.1364194
https://doi.org/10.1080/19320248.2017.1364194