Zobrazeno 1 - 10
of 1 685
pro vyhledávání: '"A D Hirschman"'
Publikováno v:
ECS Transactions. 98:131-139
Flash lamp annealing (FLA) has been explored as an alternative to excimer laser annealed low-temperature polycrystalline silicon (LTPS) for display applications and has shown potential to streamline and decrease the cost of fabrication while maintain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a4d028bbc4ea33eeec221bea8a89145
https://doi.org/10.1149/09807.0131ecst
https://doi.org/10.1149/09807.0131ecst
Akademický článek
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Publikováno v:
ECS Transactions. 90:79-88
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa52a65a857b3db1cd313ce0b5eb953
https://doi.org/10.1149/09001.0079ecst
https://doi.org/10.1149/09001.0079ecst
Autor:
Kevin S. Jones, Karl D. Hirschman, P. G. Whiting, Jayantha Senawiratne, J. Gregory Couillard, Johannes Moll, Robert George Manley, Carlo Kosik Williams
Publikováno v:
Journal of Materials Research. 34:1654-1668
A new deep level transient spectroscopy (DLTS) technique is described, called half-width at variable intensity analysis. This method utilizes the width and normalized intensity of a DLTS signal to determine the activation energy and capture cross sec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0073dc2e0deacedf7f0b038bac2ca18b
https://doi.org/10.1557/jmr.2019.70
https://doi.org/10.1557/jmr.2019.70
Publikováno v:
ECS Meeting Abstracts. :1282-1282
The invention of portable electronic devices had a huge impact on the growing interest in flat panel displays. Since the first report in 2004 on amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors (TFTs), many companies have become int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00f335741d7adb5a04a1fc8147f04926
https://doi.org/10.1149/ma2022-02351282mtgabs
https://doi.org/10.1149/ma2022-02351282mtgabs
Publikováno v:
ECS Meeting Abstracts. :1260-1260
There is wide variation in the understanding of the interaction and/or independence of channel mobility and charge trapping in IGZO TFTs. A new interpretation of transport behavior proposes an intrinsic channel mobility with distinctive temperature d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83693e07a8f0760c36e2e89fd25d2915
https://doi.org/10.1149/ma2022-02351260mtgabs
https://doi.org/10.1149/ma2022-02351260mtgabs
Autor:
Robert George Manley, Glenn Packard, Viraj Garg, Paul Bischoff, Karl D. Hirschman, Karthik Bhadrachalam, Adam Rosenfeld
Publikováno v:
ECS Transactions. 86:57-72
The development of low-temperature polycrystalline silicon (LTPS) based on excimer laser annealing (ELA) has realized CMOS TFTs with notable electrical performance. The flat-panel display industry is searching for alternative LTPS strategies which ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::199e5c64fb807af9f9252a50ea2a6f4b
https://doi.org/10.1149/08611.0057ecst
https://doi.org/10.1149/08611.0057ecst
Autor:
Karl D. Hirschman, Jason Konowitch, Rahnuma Rifat Chowdhury, Prashant Ganesh, Julia Okvath, Robert George Manley, Muhammad Salahuddin Kabir, Harithshanmaa Sethupathi
Publikováno v:
ECS Transactions. 86:125-133
The focus of this work is on the performance degradation of thermally stressed IGZO TFTs with SiO2 for both the gate dielectric and back-channel passivation material. The TFT fabrication process included a post-passivation 400 °C O2 anneal to adjust
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b77a9e4d7a7322dbd2f416e91661bad
https://doi.org/10.1149/08611.0125ecst
https://doi.org/10.1149/08611.0125ecst
Publikováno v:
ECS Transactions. 86:153-166
The existence of band-tail states (BTS) in indium-gallium-zinc oxide (IGZO) results in TFTs with electrical characteristics that are not well represented by conventional device models. Common parameters such as threshold voltage and channel mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::187865a78c8e6b8ff7c470394b0abe8d
https://doi.org/10.1149/08611.0153ecst
https://doi.org/10.1149/08611.0153ecst
Autor:
Santosh K. Kurinec, Scott Williams, Glenn Packard, Karl D. Hirschman, Alex Taylor, Carolyn Spaulding
Publikováno v:
Materials Letters. 305:130780
We report doping of thin (~60 nm) amorphous silicon (a-Si) on glass substrate to form n + polycrystalline silicon on glass in selective regions using Monolayer doping (MLD) via Flash Lamp Annealing (FLA). The phosphorus monolayer was formed on the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141c9da025f9a0ce960d75e3e699395a
https://doi.org/10.1016/j.matlet.2021.130780
https://doi.org/10.1016/j.matlet.2021.130780