Zobrazeno 1 - 10
of 120
pro vyhledávání: '"A D Bolshakov"'
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1743 (2024)
Innovative methods for substrate patterning provide intriguing possibilities for the development of devices based on ordered arrays of semiconductor nanowires. Control over the nanostructures’ morphology in situ can be obtained via extensive theore
Externí odkaz:
https://doaj.org/article/f0d894dc8e8c41edb690b7cae3940762
Autor:
Aleksandr D. Bolshakov
Publikováno v:
Vestnik Volgogradskogo Gosudarstvennogo Universiteta. Seriâ 2. Âzykoznanie, Vol 22, Iss 4, Pp 5-22 (2023)
The author of the article considers the development of the differentiating function of the apostrof (apostrophe), which is realized in the contemporary Church Slavonic language in the pronominal paradigm. The comparison of facts in grammars and old-p
Externí odkaz:
https://doaj.org/article/c8d7f18faf064c6b9b22ff922cb5de30
Autor:
Dmitry M. Mitin, Alexey D. Bolshakov, Vladimir Neplokh, Alexey M. Mozharov, Sergei A. Raudik, Vladimir V. Fedorov, Konstantin Yu. Shugurov, Vladimir Yu. Mikhailovskii, Pramod M. Rajanna, Fedor S. Fedorov, Albert G. Nasibulin, Ivan S. Mukhin
Publikováno v:
Energy Science & Engineering, Vol 8, Iss 8, Pp 2938-2945 (2020)
Abstract Attempts to improve solar cells efficiency touch all its constituents and are directly related to their fabrication protocols. While the most promising material platform for high efficiency photovoltaic devices is still III‐V semiconductor
Externí odkaz:
https://doaj.org/article/536a54f09b304083b0aba736f4edfa31
Autor:
Maria A. Anikina, Prithu Roy, Svetlana A. Kadinskaya, Alexey Kuznetsov, Valeriy M. Kondratev, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 56 (2022)
The development of novel nanophotonic devices and circuits necessitates studies of optical phenomena in nanoscale structures. Catalyzed semiconductor nanowires are known for their unique properties including high crystallinity and silicon compatibili
Externí odkaz:
https://doaj.org/article/b8c2045bdd0b488a9e7bd8ed1bac0630
Autor:
Svetlana A. Kadinskaya, Valeriy M. Kondratev, Ivan K. Kindyushov, Olga Yu. Koval, Dmitry I. Yakubovsky, Alexey Kusnetsov, Alexey I. Lihachev, Alexey V. Nashchekin, Irina Kh. Akopyan, Alexey Yu. Serov, Mariana E. Labzovskaya, Sergey V. Mikushev, Boris V. Novikov, Igor V. Shtrom, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 13, Iss 1, p 58 (2022)
Zinc oxide (ZnO) nanostructures are widely used in various fields of science and technology due to their properties and ease of fabrication. To achieve the desired characteristics for subsequent device application, it is necessary to develop growth m
Externí odkaz:
https://doaj.org/article/93a8515a79f143bcb4a386cc23d4de4e
Autor:
Alexey Kuznetsov, Prithu Roy, Dmitry V. Grudinin, Valeriy M. Kondratev, Svetlana A. Kadinskaya, Alexandr A. Vorobyev, Konstantin P. Kotlyar, Evgeniy V. Ubyivovk, Vladimir V. Fedorov, George E. Cirlin, Ivan S. Mukhin, Aleksey V. Arsenin, Valentyn S. Volkov, Alexey D. Bolshakov
Publikováno v:
Nanoscale. 15:2332-2339
Effects promoted by a Ga optical nanoantenna on self-assembled GaP nanowires including field confinement, enhanced internal reflection and antenna effect are explored. The perspectives for nanophotonic emitters, waveguides and couplers are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c810c23518ca5fd79be4be1f0403b3
https://doi.org/10.1039/d2nr04571k
https://doi.org/10.1039/d2nr04571k
Autor:
Alexey Kuznetsov, Prithu Roy, Valeriy M. Kondratev, Vladimir V. Fedorov, Konstantin P. Kotlyar, Rodion R. Reznik, Alexander A. Vorobyev, Ivan S. Mukhin, George E. Cirlin, Alexey D. Bolshakov
Publikováno v:
Nanomaterials, Vol 12, Iss 2, p 241 (2022)
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nano
Externí odkaz:
https://doaj.org/article/3e14a814e70d443bbc05e6f6b00d9120
Autor:
Alexey D. Bolshakov, Alexey M. Mozharov, Georgiy A. Sapunov, Igor V. Shtrom, Nickolay V. Sibirev, Vladimir V. Fedorov, Evgeniy V. Ubyivovk, Maria Tchernycheva, George E. Cirlin, Ivan S. Mukhin
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 146-154 (2018)
In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our st
Externí odkaz:
https://doaj.org/article/3e982dbd8ac74bbe95a99adaad31d2a5
Autor:
Vladimir V. Fedorov, Yury Berdnikov, Nickolay V. Sibirev, Alexey D. Bolshakov, Sergey V. Fedina, Georgiy A. Sapunov, Liliia N. Dvoretckaia, George Cirlin, Demid A. Kirilenko, Maria Tchernycheva, Ivan S. Mukhin
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 1949 (2021)
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed
Externí odkaz:
https://doaj.org/article/2d89a5d969e5403fb6dfec3099014da3
Autor:
Valeriy M. Kondratev, Ivan A. Morozov, Ekaterina A. Vyacheslavova, Demid A. Kirilenko, Alexey Kuznetsov, Svetlana A. Kadinskaya, Svetlana S. Nalimova, Vyacheslav A. Moshnikov, Alexander S. Gudovskikh, Alexey D. Bolshakov
Publikováno v:
ACS Applied Nano Materials. 5:9940-9949
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2959651c40f2696ee8d7f672d946a6ca
https://doi.org/10.1021/acsanm.2c02178
https://doi.org/10.1021/acsanm.2c02178