Zobrazeno 1 - 10
of 1 003
pro vyhledávání: '"A C, Leon"'
Autor:
Laurell, Hugo, Luo, Sizuo, Weissenbilder, Robin, Ammitzböll, Mattias, Ahmed, Shahnawaz, Söderberg, Hugo, Petersson, C. Leon M., Poulain, Vénus, Guo, Chen, Dittel, Christoph, Finkelstein-Shapiro, Daniel, Squibb, Richard J., Feifel, Raimund, Gisselbrecht, Mathieu, Arnold, Cord L., Buchleitner, Andreas, Lindroth, Eva, Kockum, Anton Frisk, L'Huillier, Anne, Busto, David
A photoelectron, emitted due to the absorption of light quanta as described by the photoelectric effect, is often characterized experimentally by a classical quantity, its momentum. However, since the photoelectron is a quantum object, its rigorous c
Externí odkaz:
http://arxiv.org/abs/2309.13945
Autor:
Jesús D. Cifuentes, Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-14 (2024)
Abstract Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed
Externí odkaz:
https://doaj.org/article/65dacb5d125f4d64b9b635043d7d00df
Publikováno v:
In Journal of Nuclear Materials July 2023 580
Autor:
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon, W. H. Lim, F. E. Hudson, T. Day, J. D. Cifuentes, T. Tanttu, C. H. Yang, A. Saraiva, N. V. Abrosimov, H.-J. Pohl, M. L. W. Thewalt, A. Laucht, A. S. Dzurak, J. J. Pla
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-6 (2022)
Abstract Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors. Despite the scalability advantage of using silicon technolo
Externí odkaz:
https://doaj.org/article/61d4d4e2dc994abd8009f934f2ab5cf5
Publikováno v:
In Results in Surfaces and Interfaces 1 November 2022 9
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-6 (2022)
The current work finds that ordinary table salt behaves unexpectedly. The chloride ions alone dominate the electronic states at both edges of its band gap although sodium ions are also present. This is important when NaCl is used as an insulator.
Externí odkaz:
https://doaj.org/article/c070c03fe41b4313975e08d3dea211bb
Akademický článek
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Autor:
E. L. Matheson, H. G. Smith, A. C. S. Amaral, J. F. F. Meireles, M. C. Almeida, G. Mora, C. Leon, G. Gertner, N. Ferrario, L. Suarez Battan, J. Linardon, M. Fuller-Tyszkiewicz, P. C. Diedrichs
Publikováno v:
BMC Public Health, Vol 21, Iss 1, Pp 1-14 (2021)
Abstract Background Body image concerns are prevalent among Brazilian adolescents and can lead to poor psychological and physical health. Yet, there is a scarcity of culturally-appropriate, evidence-based interventions that have been evaluated and ma
Externí odkaz:
https://doaj.org/article/175dd5272dae4b8385324553a7bb0ba9
Publikováno v:
Results in Surfaces and Interfaces, Vol 9, Iss , Pp 100087- (2022)
The addition of Cr is known to work as an effective prevention against oxidation in Fe-based alloys. This can be attributed to the peripheral oxide, the structure of which is dependent on the composition of the alloy. Using Molecular Dynamic (MD) cal
Externí odkaz:
https://doaj.org/article/083ed6526f404dbabbfbd758c7f83066
Autor:
J. Yoneda, W. Huang, M. Feng, C. H. Yang, K. W. Chan, T. Tanttu, W. Gilbert, R. C. C. Leon, F. E. Hudson, K. M. Itoh, A. Morello, S. D. Bartlett, A. Laucht, A. Saraiva, A. S. Dzurak
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Long-range coherent spin-qubit transfer between semiconductor quantum dots requires understanding and control over associated errors. Here, the authors achieve high-fidelity coherent state transfer in a Si double quantum dot, underpinning the prospec
Externí odkaz:
https://doaj.org/article/5375068b4a22446f8e4594d10efa22df