Výsledky vyhledávání - "A Alain Dijkstra"

Epitaxial Ge0.81Sn0.19 nanowires for nanoscale mid-infrared emitters

Autor: Michael S. Seifner, Sven Barth, Andreas Steiger-Thirsfeld, Alain Dijkstra, Alois Lugstein, Jos E. M. Haverkort, Masiar Sistani, Johannes Bernardi

Publikováno v: ACS Nano
ACS Nano, 13(7), 8047-8054. American Chemical Society

Highly oriented Ge 0.81Sn 0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae841cb2a26cf94da6969f28ed52f387
https://doi.org/10.1021/acsnano.9b02843

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Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1−xSnx Semiconductors

Autor: Étienne Bouthillier, Jos E. M. Haverkort, Alain Dijkstra, Oussama Moutanabbir, Anis Attiaoui, Simone Assali

Publikováno v: Physical Review Applied. 15

By independently engineering strain and composition, this work demonstrates and investigates direct-band-gap emission in the midinfrared range from ${\mathrm{Ge}}_{1\text{\ensuremath{-}}x}{\mathrm{Sn}}_{x}$ layers grown on silicon. We extend the room

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d67cd4583e025d398582e2d77ba7f971
https://doi.org/10.1103/physrevapplied.15.024031

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Unveiling Planar Defects in Hexagonal Group IV Materials

Autor: Leo Miglio, Ilaria Zardo, Lin Sun, Marcel A. Verheijen, Jos E. M. Haverkort, Diego de Matteis, Erik P. A. M. Bakkers, Marta De Luca, Alain Dijkstra, Yizhen Ren, Elham M. T. Fadaly, Silvana Botti, Anna Marzegalli, Andrey Sarikov, Riccardo Rurali, Emilio Scalise

Publikováno v: Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Nano Letters
Digital.CSIC. Repositorio Institucional del CSIC
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Nano Letters, 21(8), 3619-3625. American Chemical Society

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64d1f0612c2db0f597c51b8bc499b8f2

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Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

Autor: D. Busse, Alain Dijkstra, Jens Renè Suckert, Claudia Rödl, M. A. J. V. Tilburg, V. T. V. Lange, Jos E. M. Haverkort, Marcel A. Verheijen, Jürgen Furthmüller, Silvana Botti, Erik P. A. M. Bakkers, Elham M. T. Fadaly, Friedhelm Bechstedt, Jonathan J. Finley

Publikováno v: 2020 Conference on Lasers and Electro-Optics, CLEO 2020-Proceedings

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational sy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca14ddf3f9482d4a76c85e2cebd4b332
https://research.tue.nl/nl/publications/01dfd7f2-f90f-4892-a059-74055f85bfcf

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Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)

Autor: Heinz Schmid, Jürgen Furthmüller, Marcel A. Verheijen, Sebastian Kölling, Alain Dijkstra, Erik P. A. M. Bakkers, Friedhelm Bechstedt, Jens Renè Suckert, Elham M. T. Fadaly, Jos E. M. Haverkort, M. A. J. V. Tilburg, Jonathan J. Finley, Dorian Ziss, V. T. V. Lange, Julian Stangl, Silvana Botti, Philipp Staudinger, D. Busse, Claudia Rödl

Publikováno v: Novel In-Plane Semiconductor Lasers XIX.

Hexagonal SiGe has been theoretically shown to feature a tunable direct bandgap in the range 0.4-0.8eV. We study arrays of site-selectively grown Si_(1-x)-Ge_x nanowires (NWs) grown using the crystal transfer method in which wurtzite GaP core NWs are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a381043b1eb8ff0580bffa1e0eecc0a7
https://doi.org/10.1117/12.2544968

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Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

Autor: Simone Assali, Emilio Scalise, Alain Dijkstra, M Albani, Marcel A. Verheijen, Erik P. A. M. Bakkers, Ang Li, Roberto Bergamaschini, Francesco Montalenti, Leo Miglio, Sebastian Koelling

Publikováno v: ACS Nano, 14(2), 2445-2455. American Chemical Society

The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the effect of the growth conditions on the morphology and composition of Ge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c1e2f2e61f7d08f1b4449d1d8ded19a
http://hdl.handle.net/10281/267893

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Epitaxial GeSn and its integration in MIR Optoelectronics

Autor: Aashish Kumar, Samik Mukherjee, Oussama Moutanabbir, Alain Dijkstra, Salim Abdi, Mahmoud R. M. Atalla, Anis Attiaoui, Simone Assali

Publikováno v: Publons
Scopus-Elsevier

The effect of strain and composition on the opto-electronic properties of (Si)GeSn semiconductors across the 4-300K temperature range will be discussed to pave the way for future device operation up to 4.5 pm wavelengths.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94a795626b6764b494ebd541476e97ca
https://doi.org/10.1364/cleo_si.2020.sm3m.2

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Towards a Hexagonal SiGe Semiconductor Laser

Autor: V. T. V. Lange, Claudia Rödl, Erik P. A. M. Bakkers, Alain Dijkstra, D. Busse, Elham M. T. Fadaly, Marcel A. Verheijen, Friedhelm Bechstedt, Jos E. M. Haverkort, Jens Renè Suckert, Jürgen Furthmüller, Jonathan J. Finley, Silvana Botti, M. A. J. V. Tilburg

Publikováno v: Conference on Lasers and Electro-Optics.

Hexagonal SiGe is shown to feature a direct bandgap with a radiative strength comparable to InP. Surprisingly, it features a temperature independent emission strength, thus promising a silicon compatible laser tunable from 1.8 to 3.5 pm.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::32be338a40472b99c5d851726a8a6c78
https://doi.org/10.1364/cleo_si.2020.sm3m.6

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