Zobrazeno 1 - 10
of 29
pro vyhledávání: '"A A Knyaginin"'
Autor:
Bryzhinskaya, Nadezhda, Karabontseva, Maria, Votyakov, Kirill, Serik, Vladimir, Matsur, Herman, Knyaginin, Victor, Mazanov, Dmitry, Tumaeva, Alyona
Publikováno v:
AIP Conference Proceedings; 2024, Vol. 3102 Issue 1, p1-4, 4p
Publikováno v:
International Review of Management and Marketing, Vol 6, Iss 3, Pp 89-99 (2016)
The sustainable civilizational development of the society is a necessary condition for ensuring a high level and quality of life of people, their reliable social security. The basis of the strategy of sustainable development of the society is the adv
Externí odkaz:
https://doaj.org/article/bc07be88a5d7419985ac68cebf5449e4
Publikováno v:
2023 IEEE/CVF Winter Conference on Applications of Computer Vision Workshops (WACVW).
Publikováno v:
CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE.
The project on automation of the line of logging and sawing is considered. The algorithm of work, and also all hardware of this line is described. The nuances in the design of the line of logging and sawing are indicated.
Publikováno v:
CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE.
The article describes the solution to the problem of automating the line for sawing and sorting wood using PLC, CoDeSys, SCADA Trace Mode. A comparison of the integrated development environments for the PLC and HMI - CoDeSys and Trace Mode.
Publikováno v:
Voprosy Ekonomiki. :5-25
The article discusses the core changes, called the “new industrial revolution”. It addresses the challenges that Russia faces in its technological transition. Based on the cross-country analysis of the readiness to transition, we bring the target
Publikováno v:
Journal of Physics: Conference Series. 2086:012057
In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. Th
Autor:
Dmitriy Knyaginin
Publikováno v:
CAD/EDA, Modeling and Simulation in Modern Electronics. Part 1.
Publikováno v:
Journal of Physics: Conference Series. 1410:012196
In this study the breakdown voltage for Ti/4H-SiC type Schottky diode with six guard rings and JTE layer has been calculated by mean of numerical simulations. It is established that increase of the n-type 4H-SiC epitaxial layer from 14 up to 20 μm a
Publikováno v:
Engineering for Rural Development.