Zobrazeno 1 - 10
of 678
pro vyhledávání: '"A A, Dvoretskiĭ"'
Autor:
Benhamou-Bui, B., Consejo, C., Krishtopenko, S. S., Szoła, M., Maussang, K., Ruffenach, S., Chauveau, E., Benlemqwanssa, S., Bray, C., Baudry, X., Ballet, P., Morozov, S. V., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., Jouault, B., Torres, J., Teppe, F.
Publikováno v:
APL Photonics 8, 116106 (2023)
Two-dimensional Dirac fermions in HgTe quantum wells close to the topological phase transition can generate significant cyclotron emission that is magnetic field tunable in the Terahertz (THz) frequency range. Due to their relativistic-like dynamics,
Externí odkaz:
http://arxiv.org/abs/2307.11642
Autor:
Gebert, S., Consejo, C., Krishtopenko, S. S., Ruffenach, S., Szola, M., Torres, J., Bray, C., Jouault, B., Orlita, M., Baudry, X., Ballet, P., Morozov, S. V., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F.
Publikováno v:
Nature Photonics (2023)
Since the emergence of graphene, we have seen several proposals for the realization of Landau lasers tunable over the terahertz frequency range. The hope was that the non-equidistance of the Landau levels from Dirac fermions would suppress the harmfu
Externí odkaz:
http://arxiv.org/abs/2301.05942
Autor:
Yahniuk, I., Budkin, G. V., Kazakov, A., Otteneder, M., Ziegler, J., Weiss, D., Mikhailov, N. N., Dvoretskii, S. A., Wojciechowski, T., Bel'kov, V. V., Knap, W., Ganichev, S. D.
The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for
Externí odkaz:
http://arxiv.org/abs/2202.13827
Autor:
Yahniuk, I., Kazakov, A., Jouault, B., Krishtopenko, S. S., Kret, S., Grabecki, G., Cywiński, G., Mikhailov, N. N., Dvoretskii, S. A., Przybytek, J., Gavrilenko, V. I., Teppe, F., Dietl, T., Knap, W.
HgTe quantum wells with a thickness of ${\sim}$7 nm may have a graphene-like band structure and have been recently proposed to be potential candidates for quantum Hall effect (QHE) resistance standards under the condition of operation in the fields a
Externí odkaz:
http://arxiv.org/abs/2111.07581
Autor:
Alicea, Bradly, Chakrabarty, Rishabh, Dvoretskii, Stefan, Gopi, Akshara, Lim, Avery, Parent, Jesse
There is much to learn through synthesis of Developmental Biology, Cognitive Science and Computational Modeling. Our path forward involves a design for developmentally-inspired learning agents based on Braitenberg Vehicles. Continual developmental ne
Externí odkaz:
http://arxiv.org/abs/2103.05753
Autor:
Krishtopenko, S. S., Kadykov, A. M., Gebert, S., Ruffenach, S., Consejo, C., Torres, J., Avogadri, C., Jouault, B., Knap, W., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F.
Publikováno v:
Phys. Rev. B 102, 041404 (2020)
We report on the far-infrared magnetospectroscopy of HgTe quantum wells with inverted band ordering at different electron concentrations. We particularly focus on optical transitions from zero-mode Landau levels, which split from the edges of electro
Externí odkaz:
http://arxiv.org/abs/1912.04818
Autor:
But, D. B., Mittendorff, M., Consejo, C., Teppe, F., Mikhailov, N. N., Dvoretskii, S. A., Faugeras, C., Winnerl, S., Helm, M., Knap, W., Potemski, M., Orlita, M.
Publikováno v:
Nature Photonics 13, 783-787 (2019)
The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing
Externí odkaz:
http://arxiv.org/abs/1906.10905
Autor:
Kadykov, A., Teppe, F., Consejo, C., Viti, L., Vitiello, M., Coquillat, D., Ruffenach, S., Morozov, S., Kristopenko, S., Marcinkiewicz, M., Dyakonova, N., Knap, W., Gavrilenko, V., Michailov, N. N., Dvoretskii, S. A.
Publikováno v:
APPLIED PHYSICS LETTERS 107, 152101 (2015)
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transitio
Externí odkaz:
http://arxiv.org/abs/1804.11263
Autor:
Bovkun, L. S., Ikonnikov, A. V., Aleshkin, V. Ya., Spirin, K. E., Gavrilenko, V. I., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F., Piot, B. A., Potemski, M., Orlita, M.
Landau level spectroscopy has been employed to probe the electronic structure of the valence band in a series of p-type HgTe/HgCdTe quantum wells with both normal and inverted ordering of bands. We find that the standard axial-symmetric 4-band Kane m
Externí odkaz:
http://arxiv.org/abs/1711.08783
Autor:
Kadykov, A. M., Krishtopenko, S. S., Jouault, B., Desrat, W., Knap, W., Ruffenach, S., Consejo, C., Torres, J., Morozov, S. V., Mikhailov, N. N., Dvoretskii, S. A., Teppe, F.
Publikováno v:
Phys. Rev. Lett. 120, 086401 (2018)
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at different tem
Externí odkaz:
http://arxiv.org/abs/1710.06666