Zobrazeno 1 - 10
of 283
pro vyhledávání: '"A, Boulenc"'
Autor:
Mahato, Swaraj Bandhu, Boulenc, Pierre
Publikováno v:
Proc. SPIE 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX, 1145430 (13 December 2020)
In recent years, CCD-in-CMOS TDI image sensors are becoming increasingly popular for many small satellite missions to assure a fast and affordable access to space for Low Earth Observation. Our monolithic CCD-in-CMOS TDI imager features a specificall
Externí odkaz:
http://arxiv.org/abs/2110.00299
Autor:
Mahato, Swaraj Bandhu, Thijs, Steven, Bentell, Jonas, Wu, Linkun, Tack, Klaas, Boulenc, Pierre, Lasnet, Dorian, Van Langendonck, Renaud, De Moor, Piet
Many future small satellite missions are aimed to provide low-cost remote sensing data at unprecedented revisit rates, with a ground resolution of less than one meter. This requires high resolution, fast and sensitive line-scan imagers operating at l
Externí odkaz:
http://arxiv.org/abs/2109.14532
Autor:
Van Sieleghem, Edward, Süss, Andreas, Boulenc, Pierre, Lee, Jiwon, Karve, Gauri, De Munck, Koen, Cavaco, Celso, Van Hoof, Chris
A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m. Electrons g
Externí odkaz:
http://arxiv.org/abs/2105.05529
Akademický článek
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Autor:
Devos, Isabelle, Boulenc, Pierre
We report a study on the interface between polar high-k materials and the Si(001)-(2X1) reconstructed surface with LaAlO3 taken as a prototype material. The construction of the interface is based on the prior growth of metal lines followed by oxidati
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607609
Autor:
Da-silva, Franck, Boulenc, Xavier, Vermet, Hélène, Compigne, Pauline, Gerbal-Chaloin, Sabine, Daujat-Chavanieu, Martine, Klieber, Sylvie, Poulin, Patrick
Publikováno v:
In Journal of Pharmaceutical Sciences July 2018 107(7):1957-1972
We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents, and the cu
Externí odkaz:
http://arxiv.org/abs/cond-mat/0304312
Autor:
Margolskee, Alison, Darwich, Adam S., Pepin, Xavier, Pathak, Shriram M., Bolger, Michael B., Aarons, Leon, Rostami-Hodjegan, Amin, Angstenberger, Jonas, Graf, Franziska, Laplanche, Loic, Müller, Thomas, Carlert, Sara, Daga, Pankaj, Murphy, Dónal, Tannergren, Christer, Yasin, Mohammed, Greschat-Schade, Susanne, Mück, Wolfgang, Muenster, Uwe, van der Mey, Dorina, Frank, Kerstin Julia, Lloyd, Richard, Adriaenssen, Lieve, Bevernage, Jan, De Zwart, Loeckie, Swerts, Dominique, Tistaert, Christophe, Van Den Bergh, An, Van Peer, Achiel, Beato, Stefania, Nguyen-Trung, Anh-Thu, Bennett, Joanne, McAllister, Mark, Wong, Mei, Zane, Patricia, Ollier, Céline, Vicat, Pascale, Kolhmann, Markus, Marker, Alexander, Brun, Priscilla, Mazuir, Florent, Beilles, Stéphane, Venczel, Marta, Boulenc, Xavier, Loos, Petra, Lennernäs, Hans, Abrahamsson, Bertil
Publikováno v:
In European Journal of Pharmaceutical Sciences 1 January 2017 96:598-609
Autor:
Yun-Tzu Chang, Pol Van Dorpe, Celso Cavaco, Andrea Vinci, Mitali Sinha, Pierre Boulenc, Andreas Suss, Tom Verschooten, Chris Van Hoof, Jiwon Lee
Publikováno v:
IEEE Sensors Journal. 22:18428-18436
Autor:
Essa, Z., Pelletier, B., Morin, P., Boulenc, P., Pakfar, A., Tavernier, C., Wacquant, F., Zechner, C., Juhel, M., Autran, J.L., Cristiano, F.
Publikováno v:
In Solid State Electronics December 2016 126:163-169