Výsledky vyhledávání - "81.15.Hi (molecular beam epitaxy)"

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Autor: Teresa Ben, D.F. Reyes, V. Braza, JM José Maria Ulloa, A. Gonzalo, David González, A. D. Utrilla

Publikováno v: Nanoscale Research Letters
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d79ba4d8a9bf902f1a9241640c01601
http://europepmc.org/articles/PMC5437000

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Origin of the blueshift of photoluminescence in a type-II heterostructure

Autor: Hirotaka Sasakura, Hidekazu Kumano, Mitsuru Sato, Ikuo Suemune, Souta Miyamura, Masafumi Jo

Publikováno v: Nanoscale Research Letters

Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::701e73100095a99d97b2532a43f45a11
http://hdl.handle.net/2115/59631

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