Zobrazeno 1 - 4
of 4
pro vyhledávání: '"81.15.Hi (molecular beam epitaxy)"'
Autor:
Teresa Ben, D.F. Reyes, V. Braza, JM José Maria Ulloa, A. Gonzalo, David González, A. D. Utrilla
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-10 (2017)
As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7d79ba4d8a9bf902f1a9241640c01601
http://europepmc.org/articles/PMC5437000
http://europepmc.org/articles/PMC5437000
Publikováno v:
Nanoscale Research Letters
Blueshifts of luminescence observed in type-II heterostructures are quantitatively examined in terms of a self-consistent approach including excitonic effects. This analysis shows that the main contribution to the blueshift originates from the well r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::701e73100095a99d97b2532a43f45a11
http://hdl.handle.net/2115/59631
http://hdl.handle.net/2115/59631
Publikováno v:
Nanoscale Research Letters; Dec2014, Vol. 9 Issue 1, p1-7, 7p
Publikováno v:
Nanoscale Research Letters
An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::249c0a450ebd8a6b308a233e14a3ab78
https://doi.org/10.1186/1556-276x-9-36
https://doi.org/10.1186/1556-276x-9-36