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Entwurf und Charakterisierung von Quantendrahtintersubbandlaserstrukturen

Autor: Herrle, Thomas

Quantenkaskadenlaser (QCLs) stellen kompakte kohärente Lichtquellen im Spektralbereich des mittleren Infrarot dar. Trotz erheblicher Fortschritte besitzen QCLs im Vergleich zu Interbanddiodenlasern hohe Schwellenstromdichten aufgrund des geringen Ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e001fd2275f87ef32ee7f5adfb2b380
https://epub.uni-regensburg.de/10570/

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Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

Autor: Christophe Levallois, A. Nakhar, A. Le Corre, Rozenn Piron, J.-M. Lamy, Slimane Loualiche, Philippe Caroff, Abderrahim Ramdane, Cyril Paranthoen

Publikováno v: physica status solidi (a)
Physica Status Solidi A
Trends in Nanotechnology 2006
Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. pp.1672-1676, ⟨10.1002/pssa.200675343⟩
Trends in Nanotechnology Proceedings
Trends in Nanotechnology 2006, Sep 2006, Grenoble, France. p 1-2

International audience; We propose a new type of long-wavelength vertical cavity surface emitting laser (VCSEL) which consists of quantum wires (QWires) layers of InAs/InGaAsP grown on InP(001) and dielectrics Bragg mirrors, in order to control the i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b84c70b6b03c614726fef32dd3240608
https://hal.archives-ouvertes.fr/hal-00488399

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Strong Fermi-edge singularity in ultrahigh quality AlGaAs/ GaAs quantum wires

Autor: Thierry Guillet, Mutsuo Ogura, Roger Grousson, Valia Voliotis, X. L. Wang

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures
Physica E: Low-dimensional Systems and Nanostructures, 2006, 32 (1–2), pp.329-332. ⟨10.1016/j.physe.2005.12.125⟩

We report the observation of a strong Fermi-edge singularity (FES), with the complete suppression of the band-edge peak, in the photoluminescence spectra of ultra-high-quality modulation-doped AlGaAs/GaAs quantum wires (QWRs). We find that the FES ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01271eed12ffe458e0f59ca90d688a3e
https://hal.science/hal-00016810

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Strong charge carrier confinement in purely strain induced GaAs/InAlAs single quantum wires

Autor: Schuster, Robert, Hajak, H., Reinwald, Matthias, Wegscheider, Werner, Schuh, Dieter, Bichler, Max, Abstreiter, Gerhard

We report on micro-photoluminescence studies of single quantum wires which were grown by molecular beam epitaxy. Employing the cleaved edge overgrowth technique, quantum wires located in an overgrown (011) oriented GaAs quantum well originate purely

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a628b324428e322456df41e38e55b3ad

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Magnetotransport in variable-coupling one-dimensional ballistic constrictions

Autor: Werner Wegscheider, Vincenzo Piazza, Fabio Beltram, Michael Pepper, Stefano Roddaro, Chi-Te Liang

A scheme to produce closely spaced high-quality one-dimensional electronic channels is presented. It is based on standard nanolithography fabrication applied to a single, wide quantum well AlGaAs/GaAs heterostructure where the spatial separation of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::246e140c67b4a5619a4e00434e53b17a

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First-principles density functional theory study of strained wurtzite InP and InAs

Autor: Faical Raouafi, Chahira Hajlaoui, Laurent Pedesseau, Jacky Even, Jean-Marc Jancu, F. Ben Cheikhlarbi

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2013, 46 (50), pp.505106. ⟨10.1088/0022-3727/46/50/505106⟩
Journal of Physics D: Applied Physics, 2013, 46 (50), pp.505106. ⟨10.1088/0022-3727/46/50/505106⟩

International audience; We report on semilocal and hybrid density functional theory study of strained wurtzite crystals of InAs and InP. The crystal-field splitting has a large and nonlinear dependence on strain for both crystals. Moreover, the study

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3020669a4bb438a3d362f8160971b03
https://doi.org/10.1088/0022-3727/46/50/505106

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Homoepitaxial growth of catalyst-free GaN wires on N-polar substrates

Autor: Christophe Durand, Guillaume Perillat-Merceroz, Xiaojun Chen, Diane Sam-Giao, Joël Eymery

Publikováno v: Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2010, 97 (15), pp.151909. ⟨10.1063/1.3497078⟩
Applied Physics Letters, 2010, 97 (15), pp.151909. ⟨10.1063/1.3497078⟩

3 pages; International audience; The shape of c-oriented GaN nanostructures is found to be directly related to the crystal polarity. As evidenced by convergent beam electron diffraction applied to GaN nanostructures grown by metal-organic vapor phase

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f889e7c8ece0cca0604ee67281f86fb
https://doi.org/10.1063/1.3497078

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The fabrication of large-scale sub-10-nm core-shell silicon nanowire arrays

Autor: Jiayou Feng, Linhan Lin, Zhengcao Li, Shiming Su, Zhengjun Zhang

Publikováno v: Nanoscale Research Letters

A combination of template-assisted metal catalytic etching and self-limiting oxidation has been successfully implemented to yield core-shell silicon nanowire arrays with inner diameter down to sub-10 nm. The diameter of the polystyrene spheres after

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b81cf59543090213f629afd950c8372f

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