Zobrazeno 1 - 10
of 119
pro vyhledávání: '"78.67.Hc"'
Autor:
Ohtsu Motoichi
Publikováno v:
Nanophotonics, Vol 1, Iss 1, Pp 83-97 (2012)
This paper reviews the theoretical picture of dressed photons used to describe the electromagnetic interactions between nanometric particles located in close proximity to each other. The coupling between a dressed photon and multi-mode coherent phono
Externí odkaz:
https://doaj.org/article/633a068f8c724c3fa33db07cb9e9bac2
Publikováno v:
Open Physics, Vol 6, Iss 1, Pp 109-115 (2008)
Externí odkaz:
https://doaj.org/article/510b6b5513374a3eb133f01b8e2d6d0e
Autor:
Czajkowski Gerard, Silvestri Leonardo
Publikováno v:
Open Physics, Vol 4, Iss 2, Pp 254-269 (2006)
Externí odkaz:
https://doaj.org/article/b25bd3cd5d6347f88eac14a7103d0c7b
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 2, Pp 172-176 (2006)
AbstractWe report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble
Externí odkaz:
https://doaj.org/article/a510c81e00134913bb7d2ba1114ef56d
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 2, Pp 137-153 (2006)
AbstractThe luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence o
Externí odkaz:
https://doaj.org/article/fd95999a91804ac9af0d078e485d5cd8
Autor:
Li AP, Wendelken JF
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 11-19 (2006)
AbstractIn the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicabilit
Externí odkaz:
https://doaj.org/article/79b14d6f8bf2475084d16bdb08156c96
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 79-83 (2006)
AbstractFor InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have be
Externí odkaz:
https://doaj.org/article/1a706ff95d404690ae4113d2c39839be
Autor:
F Hargart, K Roy-Choudhury, T John, S L Portalupi, C Schneider, S Höfling, M Kamp, S Hughes, P Michler
Publikováno v:
New Journal of Physics, Vol 18, Iss 12, p 123031 (2016)
In this work we present an extensive experimental and theoretical investigation of different regimes of strong field light–matter interaction for cavity-driven quantum dot (QD) cavity systems. The electric field enhancement inside a high-Q micropil
Externí odkaz:
https://doaj.org/article/d373a16b0e894d07a103ad93e0a2f22c
Publikováno v:
New Journal of Physics, Vol 18, Iss 12, p 123019 (2016)
The operation of quantum dots (QDs) at highest possible temperatures is desirable for many applications. Capacitance–voltage spectroscopy ( C ( V )-spectroscopy) measurements are an established instrument to analyse the electronic structure and ene
Externí odkaz:
https://doaj.org/article/32e0256dafbc47a793d760a93d1ddc73
Publikováno v:
New Journal of Physics, Vol 17, Iss 12, p 123025 (2015)
In this paper, we present a detailed, all optical study of the influence of different excitation schemes on the indistinguishability of single photons from a single InAs quantum dot. For this study, we measure the Hong–Ou–Mandel interference of c
Externí odkaz:
https://doaj.org/article/5de55d4c3ee342c58efb592da9798c34