Zobrazeno 1 - 10
of 16
pro vyhledávání: '"78.55.Ap"'
Autor:
Li AP, Wendelken JF
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 1, Pp 11-19 (2006)
AbstractIn the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicabilit
Externí odkaz:
https://doaj.org/article/79b14d6f8bf2475084d16bdb08156c96
Autor:
Giuseppe Faraci
Publikováno v:
Atti della Accademia Peloritana dei Pericolanti-Classe di Scienze Fisiche, Matematiche e Naturali; Vol 96, SUPPL NO 1 (2018): Special Issue in Memory of Prof. Gaetano Giaquinta; A4
Atti della Accademia Peloritana dei Pericolanti. Classe di Scienze Fisiche, Matematiche e Naturali; Vol 96, SUPPL NO 1 (2018): Special Issue in Memory of Prof. Gaetano Giaquinta; A4
Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali, Vol 96, Iss S1, p A4 (2018)
Atti della Accademia Peloritana dei Pericolanti. Classe di Scienze Fisiche, Matematiche e Naturali; Vol 96, SUPPL NO 1 (2018): Special Issue in Memory of Prof. Gaetano Giaquinta; A4
Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali, Vol 96, Iss S1, p A4 (2018)
We report on the large photoluminescence emission (PL) obtained in germanium nanocrystals of about 100 nm, in porous deposition. Investigating Raman and PL spectra in such closely spaced agglomerates, we discovered that photoluminescence emission can
Autor:
John F. Wendelken, An-Ping Li
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 1, Iss 1, Pp 11-19 (2006)
Nanoscale Research Letters, Vol 1, Iss 1, Pp 11-19 (2006)
In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the b
Publikováno v:
EMRS Spring meeting
EMRS Spring meeting, 2004, Strasbourg, France
Journal of Applied Physics
Journal of Applied Physics, 2004, 95, pp.3677-3682. ⟨10.1063/1.1652245⟩
Journal of Applied Physics, American Institute of Physics, 2004, 95, pp.3677-3682. ⟨10.1063/1.1652245⟩
EMRS Spring meeting, 2004, Strasbourg, France
Journal of Applied Physics
Journal of Applied Physics, 2004, 95, pp.3677-3682. ⟨10.1063/1.1652245⟩
Journal of Applied Physics, American Institute of Physics, 2004, 95, pp.3677-3682. ⟨10.1063/1.1652245⟩
Time-resolved photoluminescence measurements on size-selected silicon nanocrystals have been carried out in order to elucidate the nonexponential behavior of the photoluminescence decay kinetics. The nanoparticles are gas-phase synthesized, extracted
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2002, 91 (8), pp.5334-5340. ⟨10.1063/1.1461064⟩
Journal of Applied Physics, 2002, 91 (8), pp.5334-5340. ⟨10.1063/1.1461064⟩
Journal of Applied Physics, American Institute of Physics, 2002, 91 (8), pp.5334-5340. ⟨10.1063/1.1461064⟩
Journal of Applied Physics, 2002, 91 (8), pp.5334-5340. ⟨10.1063/1.1461064⟩
International audience; The strong visible photoluminescence (PL) of nanostructured silicon, such as porous Silicon and silicon nanocrystals, is studied as a function of the power and the wavelength of the excitation laser source. The position of the
Publikováno v:
Nanoscale Research Letters
Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nano
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2002, 80 (25), pp.4834-4836. ⟨10.1063/1.1485302⟩
Applied Physics Letters, 2002, 80 (25), pp.4834-4836. ⟨10.1063/1.1485302⟩
Applied Physics Letters, American Institute of Physics, 2002, 80 (25), pp.4834-4836. ⟨10.1063/1.1485302⟩
Applied Physics Letters, 2002, 80 (25), pp.4834-4836. ⟨10.1063/1.1485302⟩
Silicon nanocrystals with diameters between 2.5 and 8 nm were prepared by pulsed CO2 laser pyrolysis of silane in a gas flow reactor and expanded through a conical nozzle into a high vacuum. Using a fast-spinning molecular-beam chopper, they were siz
A camera-based method to record spatially and time-resolved photoluminescence images of crystalline silicon wafers was developed. The camera signal is modulated by a rotating shutter wheel, allowing for a wide range of camera types to be used for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d2c7f93c741a5784df8456e6f92ce6f
Autor:
Anicete-Santos, M., Orhan, Emmanuelle, Maurera, M.A.M.A., Simoes, L.G.P., Souza, A.G., Pizani, P.S., Leite, E.R., Varela, J.A., Andres, J., Beltran, A., Longo, E.
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75 (16), pp.165105-1-165105-11. ⟨10.1103/PhysRevB.75.165105⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2007, 75 (16), pp.165105-1-165105-11. ⟨10.1103/PhysRevB.75.165105⟩
International audience; An intense and broad visible photoluminescence PL band was observed at room temperature in structurally disordered PbWO4 thin films. The scheelite lead tungstate PbWO4 films prepared by the polymeric precursor method and annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3744ab4590bb13986d66c233aa2693e5
https://hal.archives-ouvertes.fr/hal-00177152
https://hal.archives-ouvertes.fr/hal-00177152
Autor:
A. Paoletti, Saveria Santangelo, E. Milani, Maria Grazia Donato, Giuliana Faggio, A. Tucciarone, Marco Marinelli, Giacomo Messina, G. Verona Rinati
High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db35d82cd11c5ed3884d51da23e13794
http://hdl.handle.net/2108/131491
http://hdl.handle.net/2108/131491