Výsledky vyhledávání

Atomically inspired k · p approach and valley Zeeman effect in transition metal dichalcogenide monolayers

Autor: D. V. Rybkovskiy, Mikhail V. Durnev, Iann C. Gerber

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2017, 95 (15), pp.155406. ⟨10.1103/PhysRevB.95.155406⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95 (15), pp.155406. ⟨10.1103/PhysRevB.95.155406⟩

We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing tight-binding (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::584be0e7a6c6f3558045ed908b5a09ee
https://hal.archives-ouvertes.fr/hal-01868514

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Admittance investigation of MIS structures with GgTe-based single quantum wells

Autor: Stanislav M. Dzyadukh, D. I. Gorn, Sergey N. Nesmelov, Sergey A. Dvoretsky, Alexander V. Voitsekhovskii, I. I. Izhnin, Nikolaj N. Mikhailov

Publikováno v: Nanoscale research letters. 2016. Vol. 11. P. 53 (1-4)
Nanoscale Research Letters

This work presents results of the investigation of admittance of metal-insulator-semiconductor structure based on Hg1 − x Cd x Te grown by molecular beam epitaxy. The structure contains a single quantum well Hg0.35Cd0.65Te/HgTe/Hg0.35Cd0.65Te with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a97b689ca3190110a526e1bc8c143b00
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000583388

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Nonuniform exciton localization in different GaAs quantum wells studied by spatially resolved cross‐sectional cathodoluminescence

Autor: Holger T. Grahn, E. Luna, U. Jahn, Kenzo Fujiwara

Publikováno v: physica status solidi c. 6:201-204

Excitonic radiative recombination in different GaAs quantum wells (QWs) is investigated by cross-sectional cathodoluminescence (CL) spectroscopy with high spatial resolution. By measuring spectrally discriminated CL intensities originating from the v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6bb72d3400b7a681754e8cfad738ad09
https://doi.org/10.1002/pssc.200879819

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Cyclotron-resonance-assisted photcurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film

Autor: G. V. Budkin, Sergey Tarasenko, Kathirn-Maria Dantscher, D. A. Kozlov, Peter Olbrich, N. N. Mikhailov, Moritz Lindner, Vassilij Belkov, Christina Zoth, Z. D. Kvon, S. A. Dvoretsky, Bernd Jenichen, Dieter Weiss, Philipp Faltermeier, Sergey Ganichev

We report on the observation of cyclotron-resonance-induced photocurrents, excited by continuous wave terahertz radiation, in a three-dimensional topological insulator (TI) based on an 80-nm strained HgTe film. The analysis of the photocurrent format

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb53788591fea316897101b2a85ffc56

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Carrier capture and escape processes in (In,Ga)N singlequantum-well diode under forward bias condition by photoluminescence spectroscopy

Autor: Kenzo Fujiwara, H Aizawa, K Soejima, Akihiro Satake

Publikováno v: Physica status solidi. C, Current topics in solid state physics. 3(6):2203-2206

Carrier capture and escape processes in the super-bright green (In,Ga)N single-quantum-well (SQW) light-emitting diode (LED) has been studied by photoluminescence (PL) spectroscopy under reverse and forward bias conditions. The PL spectra were measur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5259a95df7af4dc46ab01cc453d4b0e
https://kyutech.repo.nii.ac.jp/records/147

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Transport in a shunted surface superlattice with a perpendicular magnetic field

Autor: Christian Gerl, Werner Wegscheider, Hans-Peter Tranitz, Thomas Feil

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 32:301-304

We experimentally investigate the transport through a shunted surface superlattice under the influence of a magnetic field applied perpendicular to the current direction. The current–voltage characteristics of these surface superlattices exhibit a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3712b02e02708ebd9b8c05ac3ebab11f
https://doi.org/10.1016/j.physe.2005.12.071

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Electric-field dependence of luminescence spectra of (In,Ga)N/GaN LEDs containing quantum wells

Autor: Kenzo Fujiwara, M Ramsteiner, S Dhar, U. Jahn

Publikováno v: phys. stat. sol. (a). 201:2619-2623

We have investigated the electric-field- and excitation-density-induced variation of the optical transition10 energy and cathodoluminescence (CL) as well as photoluminescence intensity of single and multiple11 (In,Ga)N/GaN quantum wells (QW) deposite

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebe9db5aab39e1e9daeaa8bc14f0ef77
https://doi.org/10.1002/pssa.200404976

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