Bulk electronic structure of Mn5Ge3/Ge(111) films by angle-resolved photoemission spectroscopy

Autor: W. Ndiaye, 1 M. C. Richter, 1, 2 O. Heckmann, 2 P. De Padova, 3 J.-M. Mariot, 4 A. Stroppa, 5, 6 S. Picozzi, 6 W. Wang, 7 A. Taleb-Ibrahimi, 8 P. Le Fevre, 9 F. Bertran, 9 C. Cacho, 10 M. Leandersson, 11 T. Balasubramanian, K. Hricovini1, 2

Publikováno v: Physical review. B, Condensed matter and materials physics (Online) 87 (2013): 165137-1–165137-6. doi:10.1103/PhysRevB.87.165137
info:cnr-pdr/source/autori:W. Ndiaye,1 M. C. Richter,1,2 O. Heckmann,1,2 P. De Padova,3 J.-M. Mariot,4 A. Stroppa,5,6 S. Picozzi,5,6 W. Wang,1,7 A. Taleb-Ibrahimi,8 P. Le Fevre,9 F. Bertran,9 C. Cacho,10 M. Leandersson,11 T. Balasubramanian,11 and K. Hricovini1,2/titolo:Bulk electronic structure of Mn5Ge3%2FGe(111) films by angle-resolved photoemission spectroscopy/doi:10.1103%2FPhysRevB.87.165137/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2013/pagina_da:165137-1/pagina_a:165137-6/intervallo_pagine:165137-1–165137-6/volume:87

Mn5Ge3(001) thin films grown on Ge(111)-c(2 × 8) reconstructed surfaces were studied by angle-resolved photoemission using synchrotron radiation in the 14-94 eV photon energy range. The results obtained in the ALM plane and in the AHK plane are in a

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