Zobrazeno 1 - 1
of 1
pro vyhledávání: '"4NSiC silicon carbide"'
Autor:
Boltovets M. S., Borisenko A. G., Ivanov V. N., Fedorovich О. А., Krivutsa V. A., Polozov B. P.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5, Pp 45-48 (2009)
The results of research and optimization of 4НSiC p–i–n-diodes mesastructures manufacturing method are presented as well as analysis of current-voltage characteristics and switching characteristics of p–i–n-diodes in the 25—500°C temperat
Externí odkaz:
https://doaj.org/article/795bb620960243d2aca180b847ebf9a5
