Zobrazeno 1 - 10
of 5 037
pro vyhledávání: '"4H-SiC"'
Autor:
Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 869-877 (2024)
Abstract This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K
Externí odkaz:
https://doaj.org/article/4f7afb10a0ee44b982ebca723cf9b96f
Autor:
Xinyu Wang, Ming Li, Fanpeng Zeng, Bin Zhang, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Kuan Yew Cheong, Xiaobo Hu, Xiangang Xu, Jisheng Han
Publikováno v:
Results in Physics, Vol 62, Iss , Pp 107799- (2024)
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by
Externí odkaz:
https://doaj.org/article/4e042c12f26d4762953a11bc7ce8cf73
Autor:
Zhuorui Tang, Shibo Zhao, Jian Li, Yuanhui Zuo, Jing Tian, Hongyu Tang, Jiajie Fan, Guoqi Zhang
Publikováno v:
Case Studies in Thermal Engineering, Vol 59, Iss , Pp 104507- (2024)
This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined w
Externí odkaz:
https://doaj.org/article/173aa09a172844379ca29aa739baf492
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying tr
Externí odkaz:
https://doaj.org/article/05008ca9d92d48b58e98a78a0936ceb2
Autor:
Jens Peter Konrath
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100062- (2024)
It is now 25 years since the first observation of recombination-enhanced dislocation glide (REDG) in SiC p-i-n diodes. Since then, great progress has been made in understanding the mechanism behind up to a point where models emerged that can predict
Externí odkaz:
https://doaj.org/article/89913b35679a4625ade50a8b28afe00c
Publikováno v:
Materials & Design, Vol 239, Iss , Pp 112751- (2024)
We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A nanoindentation load range between 3 mN and 15 mN was explored. Scanning Electron Microscopy and Transmission Electron Microscopy analysis are adopted
Externí odkaz:
https://doaj.org/article/b922fa1482664f56a468968030100184
Publikováno v:
Crystals, Vol 14, Iss 6, p 536 (2024)
For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material,
Externí odkaz:
https://doaj.org/article/db1ccfbe69984dc48928e57f653da9a0
Publikováno v:
Micromachines, Vol 15, Iss 6, p 665 (2024)
To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, i
Externí odkaz:
https://doaj.org/article/40637d26fabb41cc93efc15eb20d7a8c
Publikováno v:
Materials, Vol 17, Iss 11, p 2612 (2024)
In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer’
Externí odkaz:
https://doaj.org/article/f2f5120e96904e8fbcc650a1185be250
Autor:
Hang Chen, You-Run Zhang
Publikováno v:
Journal of Electronic Science and Technology, Vol 21, Iss 4, Pp 100224- (2023)
A silicon (Si)/silicon carbide (4H–SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structu
Externí odkaz:
https://doaj.org/article/dfd6f88ce08f4212bd7c3fa119c09c17